# US 11,111,579 B2 · Deposition equipment and method of fabricating semiconductor device using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,111,579 B2 - Document ID: US11111579B2 - Status: Granted - Kind: B2 - Application number: 16/386,970 - Filed: 2019-04-17 - Published: 2019-11-14 - Granted: 2021-09-07 - Earliest claimed: 2018-05-10 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Sun Yong Hwang; Hyun Su Kim; Eun-Ok Lee; Taek Jung Kim; Hyo Jung Noh; Ji Won Yu - Web page: https://patentgrep.com/patent/US11111579B2 ## CPC - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/45521: {the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery} - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck. ## Claims ### Claim 1 A deposition equipment comprising: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck, wherein the processing gas shielding section includes a shutter which is plate-like, the shutter includes a first region, a second region, and a third region between the first region and the second region, and the first region of the shutter includes a gas discharge section for jetting a purging gas toward the wafer chuck, and the third region of the shutter does not include a gas discharge section for jetting the purging gas toward the wafer chuck. ### Claim 2 (depends on 1) The deposition equipment of claim 1, wherein the third region of the shutter is defined along a periphery of the first region of the shutter, and the second region of the shutter is defined along a periphery of the third region of the shutter. ### Claim 3 (depends on 2) The deposition equipment of claim 2, wherein the first region of the shutter includes a gas nozzle which protrudes toward the wafer chuck. ### Claim 4 (depends on 1) The deposition equipment of claim 1, wherein the third region of the shutter is defined along a periphery of the second region of the shutter, and the first region of the shutter is defined along a periphery of the third region of the shutter. ### Claim 5 (depends on 1) The deposition equipment of claim 1, further comprising: a storage chamber which is connected to the reaction chamber and stores the processing gas shielding section. ### Claim 6 (depends on 5) The deposition equipment of claim 5, wherein the processing gas shielding section is stored in the storage chamber during deposition of a thin film on the wafer. ### Claim 7 (depends on 5) The deposition equipment of claim 5, wherein the processing gas shielding section is cleaned in the storage chamber. ### Claim 8 Deposition equipment comprising: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck, wherein the processing gas shielding section includes a gas nozzle which jets a purging gas with no processing gas onto the upper surface of the wafer chuck, the processing gas shielding section is connected to a purging gas supply unit but not connected to a processing gas supply unit, and a portion of the gas nozzle for injecting the purging gas is disposed on a central section of the wafer chuck. ### Claim 9 (depends on 8) The deposition equipment of claim 8, wherein the processing gas shielding section includes a shutter disposed between the gas supplier and the wafer chuck, and the gas nozzle is connected to the shutter. ### Claim 10 (depends on 8) The deposition equipment of claim 8, wherein the gas nozzle is connected to a side wall of the reaction chamber. ### Claim 11 (depends on 8) The deposition equipment of claim 8, further comprising: a lower structure disposed along a periphery of the wafer chuck, wherein the gas nozzle is connected to the lower structure.