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US 11,111,578 B1Granted
Atomic layer deposition of fluoride thin films
AssigneeUchicago Argonne, LLC
InventorsJeffrey W. Elam, Anil U. Mane, Maximillian Gebhard
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Abstract
A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
Claims10
A method of forming a secondary electron emissive coating comprising:
- providing a substrate within an atomic layer deposition reactor;
- and
- depositing a coating of CaF2 by an atomic layer deposition process including at least one cycle of:
- pulsing a first metal precursor comprising an alkaline metal amidinate into the reactor for a first metal precursor pulse time;
- purging the reactor of the first metal precursor;
- pulsing a second precursor comprising a fluorinated compound into the reactor for a second precursor pulse time;
- and
- purging the reactor of the co-reactant precursor;
- wherein the depositing occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
6 more elements
Dependencies are inferred from the claim text.