# US 11,111,573 B2 · Component and semiconductor manufacturing device

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- Number: US 11,111,573 B2
- Document ID: US11111573B2
- Status: Granted
- Kind: B2
- Application number: 16/777,371
- Filed: 2020-01-30
- Published: 2020-05-28
- Granted: 2021-09-07
- Earliest claimed: 2017-07-31
- Assignees: KYOCERA Corporation
- Applicants: Kyocera Corporation
- Inventors: Takashi Hino; Tetsuo Inoue; Shuichi Saito
- Web page: https://patentgrep.com/patent/US11111573B2

## CPC

- C23C 14/083: {of refractory metals or yttrium}
- C23C 14/185: {by cathodic sputtering}
- C23C 8/12: using elemental oxygen or ozone
- C23C 14/0078: {by moving the substrates between spatially separate sputtering and reaction stations}
- C23C 14/34: Sputtering
- C23C 14/5853: {Oxidation}
- C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof}
- H10P 50/242: {of Group IV materials}
- C23C 14/542: {Controlling the film thickness or evaporation rate}
- C23C 14/5806: {Thermal treatment}
- C30B 25/10: Heating of the reaction chamber or the substrate
- C30B 28/00: Production of homogeneous polycrystalline material with defined structure
- C30B 28/12: directly from the gas state
- C30B 28/14: by chemical reaction of reactive gases
- C30B 29/02: Elements
- C30B 29/16: Oxides
- C30B 29/22: Complex oxides
- Y10T 428/12611: Oxide-containing component
- Y10T 428/12618: Plural oxides
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

## Claims

### Claim 1

A component, comprising
a film containing crystalline yttrium oxide,
wherein
in an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002,
an average grain diameter of the crystalline yttrium oxide is 3.8 nm or less, and
in an observation image obtained by observing a cross section in a thickness direction of the film by using a scanning electron microscope at 10000 magnification, a pore is not present or a maximum diameter of a pore is 10 nm or less.

### Claim 2 (depends on 1)

The component according to claim 1, wherein the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide.

### Claim 3 (depends on 1)

The component according to claim 1, wherein a thickness of the film is 100 μm or less.

### Claim 4 (depends on 1)

The component according to claim 1, wherein a thickness of the film is 10 μm or more and 50 μm or less.

### Claim 5 (depends on 1)

The component according to claim 1, wherein: a content of yttrium oxide in the film is 99 mass % or more; a content of aluminum in the film is 100 mass ppm or less; a content of magnesium in the film is 20 mass ppm or less; a content of sodium in the film is 50 mass ppm or less; a content of zinc in the film is 100 mass ppm or less; a content of calcium in the film is 100 mass ppm or less; a content of potassium in the film is 5 mass ppm or less; and a content of nickel in the film is 10 mass ppm or less.

### Claim 6 (depends on 1)

The component according to claim 1, wherein a tensile strength B of the film obtained after performing three cycles of exposing the component to a temperature environment between 400° C. and 600° C. for 30 minutes and then exposing the component to a temperature environment of 25° C. for 30 minutes, with respect to a tensile strength A of the film under a temperature environment of 25° C., satisfies an expression: ((A−B)/A)×100%≤20%.

### Claim 7 (depends on 1)

A semiconductor manufacturing apparatus, comprising the component according to claim 1.

### Claim 8 (depends on 7)

The semiconductor manufacturing apparatus according to claim 7, further comprising a mechanism for performing plasma processing, wherein the mechanism has the component.

### Claim 9 (depends on 1)

The component according to claim 1, wherein
the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide, and
a thickness of the film is 100 μm or less.

### Claim 10 (depends on 1)

The component according to claim 1, wherein
the X-ray diffraction pattern does not have a peak attributed to yttrium oxide whose crystal structure is different from a crystal structure of the cubic yttrium oxide,
a thickness of the film is 100 μm or less,
a content of yttrium oxide in the film is 99 mass % or more,
a content of aluminum in the film is 100 mass ppm or less,
a content of magnesium in the film is 20 mass ppm or less,
a content of sodium in the film is 50 mass ppm or less,
a content of zinc in the film is 100 mass ppm or less, a content of calcium in the film is 100 mass ppm or less,
a content of potassium in the film is 5 mass ppm or less, and
a content of nickel in the film is 10 mass ppm or less.

### Claim 11 (depends on 9)

A semiconductor manufacturing apparatus, comprising the component according to claim 9.

### Claim 12 (depends on 10)

A semiconductor manufacturing apparatus, comprising the component according to claim 10.