# US 11,111,435 B2 · Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

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- Number: US 11,111,435 B2
- Document ID: US11111435B2
- Status: Granted
- Kind: B2
- Application number: 16/520,671
- Filed: 2019-07-24
- Published: 2020-02-06
- Granted: 2021-09-07
- Earliest claimed: 2018-07-31
- Assignees: Versum Materials US, LLC
- Applicants: Versum Materials US, LLC
- Inventors: Matthias Stender; Agnes Derecskei; Bradley J. Brennan
- Web page: https://patentgrep.com/patent/US11111435B2

## CPC

- C09G 1/00: Polishing compositions (French polish C09F11/00; detergents C11D)
- C09K 13/06: with organic material
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- H10P 52/403: {of conductive or resistive materials}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

## Claims

### Claim 1

A chemical mechanical planarization (CMP) composition comprising:
at least one amidine compound, or hydrolyzed derivative thereof, selected from the group consisting of 2-phenyl-2-imidazoline and 1,8-Diazabicyclo[5.4.0]undec-7-ene;
silica;
hydrogen peroxide;
ferric nitrate;
glycine;
malonic acid; and
a solvent.

### Claim 2 (depends on 1)

The CMP composition of claim 1, wherein the CMP composition comprises a pH ranging from 1 through 7.

### Claim 3 (depends on 1)

The CMP composition of claim 1, wherein the CMP composition comprises a pH ranging from 2 through 5.

### Claim 4 (depends on 1)

The CMP composition of claim 1, wherein the solvent is selected from the group consisting of: water, alcohols, ethers, ketones, glycols, organic acids, and combinations thereof.

### Claim 5 (depends on 1)

A system for chemical mechanical planarization of a semiconductor substrate having at least one surface comprising tungsten, the system comprising:
a polishing pad;
the CMP composition of claim 1;
and an applicator operationally configured to apply the CMP composition to the polishing pad; and
a carrier that is operationally configured to bring the at least one surface of comprising tungsten in contact with the polishing pad.

### Claim 6 (depends on 1)

A method for chemical mechanical planarization (CMP) of a tungsten-containing surface of a semiconductor device, comprising the steps of:
a) applying the CMP composition of claim 1 to a polishing pad;
b) after performing step (a), polishing the tungsten-containing surface with the polishing pad produce a polished tungsten-containing surface.

### Claim 7 (depends on 6)

The method of claim 6, further comprising:
c) continuing to perform step (b) until the tungsten-containing surface comprises a dishing topography of less than 1000 Angstroms and an erosion topography of less than 1000 Angstroms.