# US 11,111,413 B2 · Chemical-mechanical polishing solution having high silicon nitride selectivity

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- Number: US 11,111,413 B2
- Document ID: US11111413B2
- Status: Granted
- Kind: B2
- Application number: 16/464,856
- Filed: 2017-07-25
- Published: 2020-01-16
- Granted: 2021-09-07
- Earliest claimed: 2016-11-29
- Assignees: Anji Microelectronics Technology (Shanghai) Co., Ltd.
- Applicants: Anji Microelectronics Technology (Shanghai) Co., Ltd.
- Inventors: Wenting Zhou; Jianfen Jing
- Web page: https://patentgrep.com/patent/US11111413B2

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09K 13/02: containing an alkali metal hydroxide
- H10P 95/062: {involving a dielectric removal step}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.

## Claims

### Claim 1

A chemical-mechanical polishing slurry consisting of silica particles, a compound containing one or more carboxyl groups, a pH adjustor, and water, wherein the compound containing one or more carboxyl groups is selected from the group consisting of a pyridine compound, a piperidine compound, a pyrrolidine compound, a pyrrole compound, and any derivative and/or combination thereof.

### Claim 2 (depends on 1)

The chemical-mechanical polishing slurry as claimed in claim 1, wherein the compound containing one or more carboxyl groups is selected from the group consisting of 2-carboxyl pyridine, 3-carboxyl pyridine, 4-carboxyl pyridine, 2,3-dicarboxyl pyridine, 2,4-dicarboxyl pyridine, 2,6-dicarboxyl pyridine, 3,5-dicarboxyl pyridine, 2-carboxyl piperidine, 3-carboxyl piperidine, 4-carboxyl piperidine, 2,3-dicarboxyl piperidine, 2,4-dicarboxyl piperidine, 2,6-dicarboxyl piperidine, 3,5-dicarboxyl piperidine, 2-carboxyl pyrrolidine, 3-carboxyl pyrrolidine, 2,4-dicarboxyl pyrrolidine, 2,5-dicarboxyl pyrrolidine, 2-carboxyl pyrrole, 3-carboxyl pyrrole, 2,5-dicarboxypyrrole, and 3,4-dicarboxypyridine.

### Claim 3 (depends on 1)

The chemical-mechanical polishing slurry as claimed in claim 1 wherein the pH value of the chemical-mechanical polishing slurry is 1.5 units higher than the pKa1 of the compound containing one or more carboxyl groups and lower than 6.5.

### Claim 4 (depends on 1)

The chemical-mechanical polishing slurry as claimed in claim 1, wherein the mass percentage concentration of the silica particles is from 0.5 wt % to 8 wt %.

### Claim 5 (depends on 4)

The chemical-mechanical polishing slurry as claimed in claim 4, wherein the mass percentage concentration of said silica particles is from 1 wt % to 5 wt %.

### Claim 6 (depends on 1)

The chemical-mechanical polishing slurry as claimed in claim 1 wherein the mass percentage concentration of said compound containing one or more carboxyl groups is from 0.01 wt % to 0.5 wt %.

### Claim 7 (depends on 6)

The chemical-mechanical polishing slurry as claimed in claim 6 wherein the mass percentage concentration of the compound containing one or more carboxyl groups is from 0.01 wt % to 0.3 wt %.

### Claim 8

A chemical-mechanical polishing slurry consisting of silica particles, a compound containing one or more carboxyl groups, a pH adjustor, water, and a bactericide, wherein the compound containing one or more carboxyl groups is selected from the group consisting of a pyridine compound, a piperidine compound, a pyrrolidine compound, a pyrrole compound, and any derivative and/or combination thereof.

### Claim 9 (depends on 8)

The chemical-mechanical polishing slurry as claimed in claim 8, wherein the pH adjustor is selected from the group consisting of HNO3, KOH, K2HPO4, KH2PO4, and combinations thereof.

### Claim 10 (depends on 8)

The chemical-mechanical polishing slurry as claimed in claim 8, wherein the bactericide is selected from the group consisting of 5-chloro-2-methyl-4-isothiazolin-3-ketone (CIT), 2-methyl-4-isothiazolinone (MIT), 1,2-Phenylpropanzothiazolinone (BIT), Iodopropargyl carbamate (IPBC), 1,3-dihydroxymethyl-5,5-methyl-heine (DMDMH), and combinations thereof.

### Claim 11 (depends on 8)

The chemical-mechanical polishing slurry, as claimed in claim 8 wherein the mass percentage concentration of the bactericide is from 0.02 wt % to 0.2 wt %.