# US 11,111,412 B2 · Polishing composition, method for producing polishing composition, and polishing method

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- Number: US 11,111,412 B2
- Document ID: US11111412B2
- Status: Granted
- Kind: B2
- Application number: 16/316,970
- Filed: 2017-06-12
- Published: 2019-07-25
- Granted: 2021-09-07
- Earliest claimed: 2016-07-15
- Assignees: Fujimi Incorporated
- Applicants: Fujimi Incorporated
- Inventors: Shota Suzuki; Yoshihiro Izawa
- Web page: https://patentgrep.com/patent/US11111412B2

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- B24B 37/00: Lapping machines or devices; Accessories (B24B3/00 takes precedence)
- C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)}
- C09K 3/1436: {Composite particles, e.g. coated particles}
- H10P 95/062: {involving a dielectric removal step}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is −0.011 or more and less than 0, a pH at 25° C. of the polishing composition being less than 6.0.

## Claims

### Claim 1

A polishing composition comprising silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is −0.011 or more and less than 0, a pH at 25° C. of the polishing composition being less than 6.0, wherein:
a true density of the silica is more than 1.70 g/cm3 and 2.18 g/cm3 or less;
the silica has an average primary particle size of 100 nm or less; and
the silica has a degree of association of 1.9 to 5.0.

### Claim 2 (depends on 1)

The polishing composition according to claim 1, wherein the silica is colloidal silica.

### Claim 3 (depends on 1)

The polishing composition according to claim 1, wherein a content of the silica is more than 0% by mass and 8% by mass or less with respect to the whole composition.

### Claim 4 (depends on 1)

The polishing composition according to claim 1, wherein a true density of the silica is 1.80 g/cm3 or more and 2.18 g/cm3 or less.

### Claim 5 (depends on 1)

The polishing composition of claim 1, wherein the silica is spherically-shaped.

### Claim 6 (depends on 1)

The polishing composition of claim 1, wherein the silica has a BET specific surface area of 50 m2/g or more and 120 m2/g or less.

### Claim 7 (depends on 1)

The polishing composition according to claim 1, further comprising water.

### Claim 8 (depends on 7)

The polishing composition according to claim 7, further comprising an acid.

### Claim 9 (depends on 1)

A polishing method comprising:
polishing an object to be polished containing an oxygen atom and a silicon atom by using the polishing composition according to claim 1.

### Claim 10

A method for producing a polishing composition to be used for polishing an object to be polished, the method comprising:
preparing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is −0.011 or more and less than 0; and
mixing the silica with water, wherein:
a true density of the silica is more than 1.70 g/cm3 and 2.18 g/cm3 or less;
the silica has an average primary particle size of 100 nm or less; and
the silica has a degree of association of 1.9 to 5.0.

### Claim 11 (depends on 10)

The method of claim 10, wherein the silica is spherically-shaped.

### Claim 12 (depends on 10)

The method of claim 10, wherein the silica has a BET specific surface area of 50 m2/g or more and 120 m2/g or less.

### Claim 13 (depends on 10)

A polishing method comprising:
obtaining a polishing composition by the production method according to claim 10; and
polishing the object to be polished by using the polishing composition.