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US 11,110,681 B2Granted
Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds
AssigneeU.S. Department of Energy
InventorBrian V. Cockeram
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Abstract
Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.
Claims7
A hermetic bond for a joint, comprising:
- a first layer of silicon carbide;
- a second layer of silicon carbide;
- and
- a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes:
- an iridium foil layer with no additives,
- a first reaction zone positioned between the iridium foil layer and the first layer, and
- a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.
4 more elements
Dependencies are inferred from the claim text.