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US 11,108,982 B2Granted
Solid-state imaging device and manufacturing method therefor
AssigneeCanon Kabushiki Kaisha
InventorsMineo Shimotsusa, Fumihiro Inui
Life of this patent
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Abstract
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.
Claims44
A device comprising:
- a first semiconductor substrate;
- a second semiconductor substrate provided on a first side of the first semiconductor substrate and electrically connected to the first semiconductor substrate;
- a plurality of photoelectric conversion units each including a semiconductor region of a first conductivity type which is provided in the first semiconductor substrate;
- a plurality of optical portions provided on a second side of the first semiconductor substrate, the second side being opposite to the first side of the first semiconductor substrate;
- a floating diffusion region of the first conductivity type which is provided in the first semiconductor substrate and is connected to a contact plug provided on the first side of the first semiconductor substrate;
- a plurality of transfer gates provided on the first side of the first semiconductor substrate;
- an isolation portion provided in the first semiconductor substrate;
- and
- a plurality of transistors provided in the second semiconductor substrate,
- wherein
- the plurality of the photoelectric conversion units at least include first through fourth photoelectric conversion units,
- the first photoelectric conversion unit and the second photoelectric conversion unit are arranged on a first line along a first direction,
- the third photoelectric conversion unit and the fourth photoelectric conversion unit are arranged on a second line along the first direction, the second line being parallel to the first line,
- the first photoelectric conversion unit and the third photoelectric conversion unit are arranged on a third line along a second direction, the third line being perpendicular to the first line and to the second line,
- the second photoelectric conversion unit and the fourth photoelectric conversion unit are arranged on a fourth line along the second direction, the fourth line being parallel to the third line,
- the plurality of the transfer gates at least include first through fourth transfer gates respectively arranged between corresponding one of the first through fourth photoelectric conversion units and the floating diffusion region, and
- the isolation portion includes a first semiconductor region of a second conductivity type different from the first conductivity type which forms a PN junction between the first semiconductor region and the semiconductor region of the first conductivity type included in the first photoelectric conversion unit and forms a PN junction between the first semiconductor region and the semiconductor region of the first conductivity type included in the second photoelectric conversion unit.
14 more elements
A device comprising:
- a first semiconductor substrate;
- a second semiconductor substrate provided on a first side of the first semiconductor substrate and electrically connected to the first semiconductor substrate;
- a plurality of photoelectric conversion units provided in the first semiconductor substrate;
- a plurality of optical portions provided on a second side of the first semiconductor substrate, the second side being opposite to the first side of the first semiconductor substrate;
- a floating diffusion region provided in the first semiconductor substrate;
- a plurality of transfer gates provided on the first side of the first semiconductor substrate;
- an element isolation portion provided in the first semiconductor substrate;
- and
- a plurality of transistors provided in the second semiconductor substrate,
- wherein
- the plurality of the photoelectric conversion units at least include first through fourth photoelectric conversion units,
- the first photoelectric conversion unit and the second photoelectric conversion unit are arranged on a first line,
- the third photoelectric conversion unit and the fourth photoelectric conversion unit are arranged on a second line, the second line being parallel to the first line,
- the first photoelectric conversion unit and the third photoelectric conversion unit are arranged on a third line, the third line being perpendicular to the first line,
- the second photoelectric conversion unit and the fourth photoelectric conversion unit are arranged on a fourth line, the fourth line being parallel to the third line,
- the floating diffusion region is provided between the first photoelectric conversion unit and the fourth photoelectric conversion unit and is provided between the second photoelectric conversion unit and the third photoelectric conversion unit,
- the plurality of the transfer gates at least include first through fourth transfer gates respectively arranged between corresponding one of the first through fourth photoelectric conversion units and the floating diffusion region,
- the element isolation portion includes a first portion, a second portion, a third portion, and a fourth portion,
- the first portion is provided between the first photoelectric conversion unit and the second photoelectric conversion unit,
- the second portion is provided between the third photoelectric conversion unit and the fourth photoelectric conversion unit,
- the third portion is provided between the first photoelectric conversion unit and the third photoelectric conversion unit, and
- the fourth portion is provided between the second photoelectric conversion unit and the fourth photoelectric conversion unit.
19 more elements
Dependencies are inferred from the claim text.