Semiconductor devices with single-photon avalanche diode pixels
AssigneeSemiconductor Components Industries, LLC
InventorDariusz Piotr Palubiak
Life of this patent
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Abstract
A semiconductor device may include an array of single-photon avalanche diode pixels. The single-photon avalanche diode (SPAD) pixels may include a SPAD coupled to a supply voltage terminal via first and second reset paths. The first reset path may be a fast reset path that provides the SPAD with a short recovery time. The second reset path may be a slower reset path that provides the SPAD with a longer recovery time, but is used to ensure the SPAD is quenched even when the quench resistance associated with the first reset path is low. Logic circuitry may selectively activate the first or the second resets to quench and reset the SPAD. A SPAD pixel may also include one or more switches that keep nodes in the SPAD pixel at a constant voltage when the SPAD pixel is inactive.
Claims15
An image pixel, comprising:
- a single-photon avalanche diode coupled between first and second supply voltage terminals;
- a first reset path coupling the single-photon avalanche diode to the second supply voltage terminal;
- a second reset path coupling the single-photon avalanche diode to the second supply voltage terminal;
- a first transistor coupled along the first reset path;
- a second transistor coupled along the second reset path;
- and
- logic circuitry configured to generate a first control signal for a gate terminal of the first transistor and a second control signal for a gate terminal of the second transistor.
A semiconductor device comprising:
- a pixel that includes:
- a single-photon avalanche diode having a first terminal coupled a supply voltage terminal and a second terminal coupled to a node, wherein the node is pulled to a first voltage in response to an incident photon;
- a first transistor that is coupled to the node;
- a second transistor that is coupled to the node and that is operable to pull the node to a second voltage;
- a third transistor that is coupled in series with the first transistor, wherein the first and third transistors are operable to pull the node to the second voltage;
- and
- a readout path, wherein the first, second, and third transistors are controlled based on a set of signals generated along the readout path.
A semiconductor device comprising:
- a single-photon avalanche diode coupled between first and second supply voltage terminals;
- a first transistor coupling the single-photon avalanche diode to the second supply voltage terminal, the first transistor having a first gate terminal configured to receive a first control signal;
- and
- a second transistor coupling the single-photon avalanche diode to the second supply voltage terminal, the second transistor having a second gate terminal configured to receive a second control signal that is an inverted version of the first control signal.
Dependencies are inferred from the claim text.