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US 11,108,390 B2Granted
Method of forming a semiconductor device and circuit therefor
AssigneeSemiconductor Components Industries, LLC
InventorsJaume Roig-Guitart, Johan Camiel Julia Janssens, Frederick Johan G Declercq, Teddy Bonnin
Life of this patent
Estimating the term…
Abstract
In one embodiment, a driver circuit is configured to form a Vgs of a transistor as a negative value during a time interval that a second transistor, connected to the first transistor, is being enabled.
Claims20
A method of controlling a gallium nitride switch comprising:
- configuring a first driver circuit to form a first Vgs for a first GaN switch, and configuring a second driver circuit to form a second Vgs for a second GaN switch wherein the first GaN switch and the second GaN switch are configured for coupling together at a bridge node and wherein the first driver circuit and the second driver circuit are configured receive an operating voltage between a voltage input and a common return;
- configuring the first driver circuit to enable the first GaN switch by forming the first Vgs as a first value greater than substantially the operating voltage for a first time interval wherein the first value is substantially constant for the first time interval, the first driver circuit configured to continue enabling the first GaN switch subsequently for a second time interval by forming the first Vgs as a second value that is less than the first value and greater than a first threshold value of the first GaN switch;
- and
- configuring the second driver circuit to enable the second GaN switch by forming the second Vgs as a third value greater than substantially the operating voltage for a third time interval wherein the third value is substantially constant for the third time interval, the second driver circuit configured to continue enabling the second GaN switch subsequently for a fourth time interval by forming the second Vgs as a fourth value that is less than the third value and greater than a second threshold value of the second GaN switch wherein the third time interval is subsequent to the second time interval and the fourth time interval is subsequent to the third time interval.
1 more element
A circuit for controlling GaN transistors comprising:
- a first circuit configured to control a first Vgs for a first GaN transistor that is coupled to a second GaN transistor wherein the first circuit is configured to form the first Vgs as a first negative value wherein the first circuit forms the first negative value for a first time interval;
- a second circuit configured to control a second Vgs for the second GaN transistor wherein the second circuit is configured to form the second Vgs as a second value for a second time interval to enable the second GaN transistor and wherein the second time interval is subsequent to the first time interval;
- the first circuit configured to form the first Vgs as the first negative value for a third time interval that overlaps at least a portion of the second time interval;
- the second circuit configured to form the second Vgs as a third value that is a second negative value for a fourth time interval to disable the second GaN transistor wherein the fourth time interval is subsequent to the third time interval;
- and
- the first circuit configured to form the first Vgs as the first negative value for a fifth time interval that overlaps at least a portion of the fourth time interval.
3 more elements
A method of forming a semiconductor device comprising:
- forming a first circuit to control a first Vgs of a first HEMT, the first HEMT having a gate and a source;
- forming a second circuit to control a second Vgs of a second HEMT that is coupled to the first HEMT wherein the second HEMT is coupled in series with the first HEMT at a common node;
- and
- forming the first circuit to form the first Vgs at a first negative value for at least a portion of a first time interval that the second circuit forms the second Vgs to enable the second HEMT wherein the first circuit forms the first Vgs at a value that is no less than a value of the source of the first HEMT for a second portion of the first time interval that second circuit forms the second Vgs to enable the second HEMT.
1 more element
Dependencies are inferred from the claim text.