US 11,108,373 B2Granted

Resonator and resonance device

AssigneeMurata Manufacturing Co., Ltd.

InventorToshio Nishimura

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Abstract

A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T≥4 and y=−0.85×(1/T)+0.57±0.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.

Claims20

Dependent claims

A resonator comprising:

a vibrator including:
a silicon substrate,
at least one electrode that faces a surface of the silicon substrate, and
a piezoelectric body disposed between the silicon substrate and the at least one electrode, the piezoelectric body configured to produce contour vibration in a plane along the surface of the silicon substrate based on a voltage applied to the at least one electrode;
a frame that surrounds at least a portion of the vibrator;
and
at least one holding arm that connects the vibrator to the frame,
wherein the vibrator includes at least one rectangular vibration region that has a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration, and
wherein W/T≥4 and y=−0.85×(1/T)+0.57±0.05, where T is a thickness of the silicon substrate in a direction orthogonal to the surface thereof, W is a width of the short side of the vibration region, and y is a resistivity of the silicon substrate.

6 more elements

A resonator comprising:

a vibrator including:
a silicon substrate,
at least one electrode that faces a surface of the silicon substrate, and
a piezoelectric body disposed between the silicon substrate and the at least one electrode, the piezoelectric body configured to produce contour vibration in a plane along the surface of the silicon substrate based on a voltage applied to the at least one electrode;
a frame that surrounds at least a portion of the vibrator;
and
at least one holding arm that connects the vibrator to the frame,
wherein the vibrator includes at least one rectangular vibration region that has a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration, and
wherein W/T<4 and y=−0.19×(W/T2)+0.58±0.05, where T is a thickness of the silicon substrate in a direction orthogonal to the surface thereof, W is a width of the short side of the vibration region, and y is a resistivity of the silicon substrate.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/174,526Filed 30 Oct 2018 · continuation
Priority: JP JP2016-10553126 May 2016
Published: US 2019/0074811 A17 Mar 2019
Granted: 31 Aug 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification22 codes

H03H 9/02102
Means for compensation or elimination of undesirable effects: of temperature influence
H03H 9/02338
Of microelectro-mechanical resonators: suspension means
B81B 3/00
Devices comprising flexible or deformable elements
H03H 9/02
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators: details