Light modulation element, optical device including the light modulation element, and electronic device including the optical device

A light modulation element comprising:

• a substrate comprising a metal;
• a lower DBR layer provided on the substrate, wherein the lower DBR layer comprises at least one first material layer and at least one second material layer alternately stacked with the at least one first material layer, and a first refractive index of the at least one first material layer is different from a second refractive index of the at least one second material layer;
• an active layer provided on the lower DBR layer, the active layer comprising a semiconductor material having a multi-quantum well structure and having a refractive index that is variable according to an applied voltage;
• and
• an upper DBR layer provided on the active layer, wherein the upper DBR layer comprises at least one third material layer and at least one fourth material layer alternately stacked with the at least one third material layer, and a third refractive index of the at least one third material layer is different from a fourth refractive index of the at least one fourth material layer.

An optical device comprising:

• a substrate;
• a first lower DBR layer provided on the substrate, wherein the first lower DBR layer comprises at least one first material layer and at least one second material layer alternately stacked with the at least one first material layer, wherein a first refractive index of the at least one first material layer is different from a second refractive index of the at least one second material layer;
• a plurality of resonators spaced apart from each other and provided on the first lower DBR layer, each resonator from among the plurality of resonators having a refractive index that is variable according to an applied voltage;
• and
• a voltage controller configured to control the voltage applied to each resonator from among the plurality of resonators, wherein
• each resonator from among the plurality of resonators comprises:
• a second lower DBR layer provided on the first lower DBR layer, wherein the second lower DBR layer comprises at least one third material layer and at least one fourth material layer alternately stacked with the at least one third material layer, and a third refractive index of the at least one third material layer is different from a fourth refractive index of the at least one fourth material layer, the second lower DBR layer having a surface area less than a surface area of the first lower DBR layer;
• an active layer provided on the second lower DBR layer, the active layer comprising a semiconductor material having a multi-quantum well structure and having a refractive index that is variable according to the applied voltage;
• and
• an upper DBR layer provided on the active layer, wherein the upper DBR layer comprises at least one fifth material layer and at least one sixth material layer alternately stacked with the at least one fifth material layer, and a fifth refractive index of the at least one fifth material layer is different from a sixth refractive index of the at least one sixth material layer.

An optical device comprising:

• a substrate comprising a metal;
• a plurality of resonators spaced apart from each other and provided on the substrate, each resonator from among the plurality of resonators having a refractive index that is variable according to an applied voltage;
• and
• a voltage controller configured to control the voltage applied to each resonator from among the plurality of resonators, wherein
• each resonator from among the plurality of resonators comprises:
• a lower DBR layer provided on the substrate, wherein the lower DBR layer comprises at least one first material layer and at least one second material layer alternately stacked with the at least one first material layer, and a first refractive index of the at least one first material layer is different from a second refractive index of the at least one second material layer;
• an active layer provided on the lower DBR layer, the active layer comprising a semiconductor material having a multi-quantum well structure and having a refractive index that is variable according to the applied voltage;
• and
• an upper DBR layer provided on the active layer, wherein the upper DBR layer comprises at least one third material layer and at least one fourth material layer alternately stacked with the at least one third material layer, and a third refractive index of the at least one third material layer is different from a fourth refractive index of the at least one fourth material layer.