Millimeter wave filter array
AssigneeKnowles Cazenovia, Inc.
InventorDavid Bates
Life of this patent
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Abstract
Methods, systems, and apparatuses, for a millimeter wave filter array are discussed. The filter array includes an array of unit cells formed using a dielectric layer of a dielectric material, the dielectric layer having a first surface and an opposing second surface. Each unit cell includes conductive sidewall layers extending at least partially between the first surface and the second surface of the dielectric layer and defining a resonant space within the dielectric layer. Each unit cell also includes a metallized layer formed on the first surface, covering at least a portion of the resonant space of the dielectric layer and electrically connected to the conductive sidewall layers. Each unit cell includes a radio-frequency input-output (RF I/O) contact formed on the first surface of the dielectric layer.
Claims20
A radio frequency device, comprising:
- a first dielectric layer of a dielectric material, the first dielectric layer having a first surface and a second surface opposing the first surface, the first dielectric layer having a first plurality of cavities, each of the first plurality of cavities extending between the first surface and the second surface;
- and
- a first filter unit cell formed at least partially in the first dielectric layer, the first filter unit cell comprising:
- a first plurality of sidewalls of the first plurality of cavities,
- first conductive sidewall layers formed on at least portions of the first plurality of sidewalls, the first conductive sidewall layers defining a first resonant space comprising some of the dielectric material,
- a first conductive layer formed on the first surface, covering at least a portion of the first resonant space and electrically connected to the first conductive sidewall layers, and
- a first radio-frequency input-output (RF I/O) contact formed on the first surface, the first RF I/O contact electrically isolated from the first conductive layer by a first isolation region formed around at least a portion of a perimeter of the first RF I/O contact.
Dependencies are inferred from the claim text.