Memory cell with magnetic layers for reset operation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMauricio Manfrini, Marcus Johannes Henricus van Dal
Life of this patent
Estimating the term…
Abstract
Various embodiments of the present disclosure are directed towards a memory cell including a first ferromagnetic layer and a second ferromagnetic layer. A bottom electrode via overlies a substrate. A bottom electrode overlies the bottom electrode via. A data storage layer overlies the bottom electrode. The first ferromagnetic layer overlies the data storage layer and has a first magnetization pointing in a first direction. The second ferromagnetic layer overlies the bottom electrode via and has a second magnetization pointing in a second direction orthogonal to the first direct.
Claims20
A memory cell comprising:
- a bottom electrode via overlying a substrate;
- a bottom electrode overlying the bottom electrode via;
- a data storage layer overlying the bottom electrode;
- a first ferromagnetic layer overlying the data storage layer and having a first magnetization pointing in a first direction;
- and
- a second ferromagnetic layer overlying the bottom electrode via and having a second magnetization pointing in a second direction orthogonal to the first direction, wherein the second ferromagnetic layer is disposed between the bottom electrode via and the bottom electrode.
A memory device comprising:
- one or more lower interconnect layers overlying a substrate, wherein the one or more lower interconnect layers comprise a bottom electrode via;
- a resistive random access memory (RRAM) cell overlying the bottom electrode via, wherein the RRAM cell comprises:
- a bottom electrode overlying the bottom electrode via;
- a data storage layer overlying the bottom electrode;
- a first ferromagnetic layer overlying the data storage layer and having a first magnetization pointing in a first direction;
- and
- a second ferromagnetic layer overlying the bottom electrode via and having a second magnetization pointing in a second direction different than the first direction.
A memory device comprising:
- a bottom electrode via overlying a substrate;
- a resistive random access memory (RRAM) cell overlying the bottom electrode via, wherein the RRAM cell comprises a bottom electrode overlying the bottom electrode via, a data storage layer overlying the bottom electrode, a first ferromagnetic layer, and a second ferromagnetic layer disposed between the bottom electrode via and the data storage layer, wherein the bottom electrode comprises a non-magnetic material different than a first magnetic material of the first ferromagnetic layer and a second magnetic material of the second ferromagnetic layer, wherein opposing sidewalls of the first ferromagnetic layer, opposing sidewalls of the second ferromagnetic layer, and opposing sidewalls of the data storage layer are aligned;
- and
- a top electrode via overlying the RRAM cell, wherein the first ferromagnetic layer is disposed between the top electrode via and the data storage layer.
Dependencies are inferred from the claim text.