Resistive random access memory device comprising metal halide and method for preparing the same

A resistive random access memory device, comprising:

• a resistance change layer formed on a first electrode;
• and
• a second electrode formed on the resistance change layer,
• wherein the resistance change layer comprises an organic metal halide having a first perovskite crystal structure including a tetragonal perovskite structure and a metal halide having a second perovskite crystal structure including an orthorhombic perovskite structure,
• wherein the resistance change layer comprises 10 wt % or more of the metal halide having the second perovskite crystal structure than the organic metal halide having the first perovskite crystal structure,
• wherein the organic metal halide having the first perovskite crystal structure is represented by the following Chemical Formula 1, and the metal halide having the second perovskite crystal structure is represented by the following Chemical Formula 2:
• RMX3 [Chemical Formula 1]
• AMX3 [Chemical Formula 2]
• (In Chemical Formula 1 and Chemical Formula 2,
• R is a substituted or unsubstituted C1-24 alkyl group, and when R is substituted, its substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
• A is an alkali metal cation,
• M includes a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
• X includes a halide anion or a chalcogenide anion).