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US 11,107,985 B2Granted
Materials and components in phase change memory devices
AssigneeIntel Corporation
InventorsValter Soncini, Davide Erbetta
Life of this patent
Estimating the term…
Abstract
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.
Claims17
A memory cell comprising:
- a memory element between a first conductive line and a second conductive line;
- a select device between the memory element and the first conductive line;
- a first electrode between the select device and the first conductive line, the first electrode including amorphous carbon doped with silicon;
- a second electrode between the memory element and the second conductive line, the second electrode including amorphous carbon doped with silicon;
- and
- a third electrode between the memory element and the select device, the third electrode including amorphous carbon doped with silicon.
3 more elements
A memory device comprising:
- a crosspoint array of memory cells, each of the memory cells comprising:
- a first chalcogenide material between a first conductive line and a second conductive line;
- a second chalcogenide material between the first chalcogenide material and the first conductive line;
- a first electrode material between the first chalcogenide material and the first conductive line, the first electrode material including amorphous carbon doped with silicon;
- a second electrode material between the first chalcogenide material and the second conductive line, the second electrode material including amorphous carbon doped with silicon;
- and
- a third electrode material between the first chalcogenide material and the second chalcogenide material, the third electrode material including amorphous carbon doped with silicon.
4 more elements
A memory device comprising:
- an array of memory cells, each of the memory cells comprising:
- a phase change material between a first conductive line and a second conductive line;
- a first electrode material between the phase change material and the first conductive line, the first electrode material including amorphous carbon doped with silicon;
- and
- a second electrode material between the phase change material and the second conductive line, the second electrode material including amorphous carbon doped with silicon.
2 more elements
Dependencies are inferred from the claim text.