Resistive random access memory array and manufacturing method thereof
AssigneeWinbond Electronics Corp.
InventorsChih-Cheng Fu, Ming-Che Lin
Life of this patent
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Abstract
A RRAM array and its manufacturing method are provided. The RRAM array includes a substrate having an array region which has a first region and a second region. The RRAM array includes a bottom electrode layer on the substrate, an oxygen ion reservoir layer on the bottom electrode layer, a diffusion barrier layer on the oxygen ion reservoir layer, a resistance switching layer on the diffusion barrier layer, and a top electrode layer on the resistance switching layer. The diffusion barrier layer in the first region is different from the diffusion barrier layer in the second region.
Claims17
A resistive random access memory array (RRAM), comprising:
- a substrate, wherein an array region of the substrate comprises a first region and a second region;
- a bottom electrode layer located on the substrate;
- an oxygen ion reservoir layer located on the bottom electrode layer;
- a diffusion barrier layer located on the oxygen ion reservoir layer, wherein the diffusion barrier layer located in the first region is different from the diffusion barrier layer located in the second region;
- a resistance switching layer located on the diffusion barrier layer;
- and
- a top electrode layer located on the resistance switching layer.
A method for manufacturing a resistive random access memory (RRAM) array, comprising:
- providing a substrate, wherein an array region of the substrate comprises a first region and a second region;
- forming a bottom electrode layer on the substrate;
- forming an oxygen ion reservoir layer on the bottom electrode layer;
- forming a diffusion barrier layer on the oxygen ion reservoir layer, wherein the diffusion barrier layer located in the first region is different from the diffusion barrier layer located in the second region;
- forming a resistance switching layer on the diffusion barrier layer;
- and
- forming a top electrode layer on the resistance switching layer.
Dependencies are inferred from the claim text.