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US 11,107,980 B2Granted
MRAM fabrication and device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang Wu, Wu Meng Yu, Szu-Hua Wu, Chin-Szu Lee, Han-Ting Tsai, Yu-Jen Chien
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Abstract
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Claims20
A method comprising:
- forming a bottom electrode over a via, the via electrically coupling the bottom electrode to a control line for a magnetoresistive random access memory (MRAM) device;
- forming a magnetic tunnel junction (MTJ) over the bottom electrode;
- forming a top electrode over the MTJ, a material of the top electrode comprising a first material;
- and
- doping the top electrode with a first dopant, the first dopant including carbon, silicon, or combinations thereof.
2 more elements
A method comprising:
- forming a bottom electrode of a magnetoresistive random access memory (MRAM) device;
- forming a magnetic tunnel junction (MTJ) stack over the bottom electrode, the MTJ stack comprising an anti-ferromagnetic layer, a pinning layer, and a free layer;
- forming a top electrode over the MTJ stack, the top electrode physically coupled to the free layer of the MTJ stack, the top electrode comprising titanium nitride;
- performing an ion beam etch to thin the top electrode.
1 more element
A method comprising:
- depositing a bottom electrode of a magnetoresistive random access memory (MRAM) device, the bottom electrode connected by a bottom electrode via to a metal feature of an underlying substrate;
- forming a magnetic tunnel junction (MTJ) stack disposed over the bottom electrode, wherein forming the MTJ stack comprises:
- depositing an anti-ferromagnetic layer on the bottom electrode,
- depositing a pinning layer over the anti-ferromagnetic layer, and
- depositing a free layer over the pinning layer;
- and
- depositing a top electrode disposed over the MTJ stack, the top electrode having a tensile stress greater than 400 Mpa.
4 more elements
Dependencies are inferred from the claim text.