Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
AssigneeSpin Memory, Inc.
InventorSatoru Araki
Life of this patent
Estimating the term…
Abstract
A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.
Claims27
A Magnetic Tunnel Junction (MTJ) device comprising:
- a reference magnetic layer including one or more trenches within the reference magnetic layer;
- a plurality of sections of a tunnel barrier layer disposed on the walls of the one or more trenches within the reference magnetic layer;
- a plurality of sections of a free magnetic layer disposed on corresponding sections of the tunnel barrier layer in the one or more trenches within the reference magnetic layer;
- a plurality of sections of a conductive layer disposed on corresponding sections of the free magnetic layer in the one or more trenches within the reference magnetic layer;
- and
- one or more insulator blocks disposed in the one or more trenches within the reference magnetic layer and between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches within the reference magnetic layer.
A device comprising:
- a reference magnetic layer including a plurality of trenches within the reference magnetic layer;
- a plurality of sections of a tunnel barrier layer disposed on the walls of the plurality of trenches within the reference magnetic layer;
- a plurality of sections of a free magnetic layer disposed on corresponding sections of the tunnel barrier layer in the plurality of trenches within the reference magnetic layer;
- a plurality of sections of a conductive layer disposed on corresponding sections of the free magnetic layer in the plurality of trenches within the reference magnetic layer;
- and
- a plurality of insulator blocks disposed in the plurality of trenches within the reference magnetic layer between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in an array of columns and rows in the plurality of trenches within the reference magnetic layer.
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells including;
- a reference magnetic layer including a plurality of trenches within the reference magnetic layer;
- a plurality of sections of a tunnel barrier layer disposed on the walls of the plurality of trenches within the reference magnetic layer;
- a plurality of sections of a free magnetic layer disposed on corresponding sections of the tunnel barrier layer in the plurality of trenches within the reference magnetic layer;
- a plurality of sections of a conductive layer disposed in the plurality of trenches within the reference magnetic layer on corresponding sections of the free magnetic layer in the plurality of trenches within the reference magnetic layer;
- a plurality of insulator blocks disposed in the plurality of trenches within the reference magnetic layer between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in an array of columns and rows in the plurality of trenches within the reference magnetic layer;
- a bit line coupled to the reference magnetic layer;
- and
- a plurality of select transistors, each select transistor coupled to respective sections of the conductive layer in the plurality of trenches.
Dependencies are inferred from the claim text.