Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element
AssigneeSumitomo Chemical Company, Limited
InventorsKenji Shibata, Kazutoshi Watanabe, Fumimasa Horikiri
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Abstract
There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1−xNax) NbO3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less.
Claims6
A laminated substrate with a piezoelectric thin film, comprising:
- a substrate;
- an electrode film formed on the substrate;
- and
- a piezoelectric thin film formed on the electrode film,
- wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1−xNax)NbO3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and
- contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less, and
- the piezoelectric thin film has a leakage current density of 500 μA/cm2 or less at the time of applying an electric field of 25×106 V/m in a thickness direction, and
- the piezoelectric thin film has a relative permittivity of 300 or more and 1000 or less when being measured under a condition of a frequency of 1 kHz.
A laminated substrate with a piezoelectric thin film, comprising:
- a substrate;
- an electrode film formed on the substrate;
- and
- a piezoelectric thin film formed on the electrode film,
- wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1−xNax) NbO3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction,
- has an etching rate of 0.005 μm/hr or less, when etching is performed using a fluorine-based etching solution containing hydrogen fluoride at a concentration of 4.32 mol/L and ammonium fluoride at a concentration of 10.67 mol/L respectively,
- has a leakage current density of 500 μA/cm2 or less, at the time of applying an electric field of 25×106 V/m in a thickness direction, and
- has a relative permittivity of 300 or more and 1000 or less, when being measured under a condition of a frequency of 1 kHz.
A piezoelectric thin film element, comprising:
- a lower electrode film;
- a piezoelectric thin film formed on the lower electrode film;
- and
- an upper electrode film formed on the piezoelectric thin film,
- wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (Ki−xNax)NbO3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and
- contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less, and
- the piezoelectric thin film has a leakage current density of 500 μA/cm2 or less at the time of applying an electric field of 25×106 V/m in a thickness direction, and
- the piezoelectric thin film has a relative permittivity of 300 or more and 1000 or less when being measured under a condition of a frequency of 1 kHz.
Dependencies are inferred from the claim text.