Production of radiation-emitting semiconductor components

A radiation-emitting semiconductor component comprising:

• a single radiation-emitting semiconductor chip, wherein the semiconductor chip comprises contacts at a rear side;
• a conversion layer containing phosphor and arranged on a front side and on side faces of the semiconductor chip;
• and
• a reflective layer arranged in a region of the rear side on the semiconductor chip and on the conversion layer,
• wherein a rear-side surface of the contacts of the semiconductor chip is not covered with the reflective layer,
• the semiconductor component comprises phosphor both in a region of the front side and in a region of the side faces of the semiconductor chip due to the conversion layer, and
• the conversion layer completely covers the side faces of the semiconductor chip and extends as far as rear-side edges of the semiconductor chip such that the conversion layer does not protrude beyond the rear side of the semiconductor chip.

A radiation-emitting semiconductor component comprising:

• a single radiation-emitting semiconductor chip, wherein the semiconductor chip comprises contacts at a rear side;
• a conversion layer containing phosphor and arranged on a front side and on side faces of the semiconductor chip;
• and
• a reflective layer arranged in a region of the rear side on the semiconductor chip and on the conversion layer,
• wherein a rear-side surface of the contacts of the semiconductor chip is not covered with the reflective layer,
• the semiconductor component comprises phosphor both in a region of the front side and in a region of the side faces of the semiconductor chip due to the conversion layer,
• the conversion layer comprises a matrix material and phosphor particles,
• a layer thickness of the conversion layer in the region of the side faces that is related to a thickness extension of the conversion layer starting from each of the side faces of the semiconductor chip is greater than a layer thickness of the conversion layer in the region of the front side that is related to a thickness extension of the conversion layer starting from the front side of the semiconductor chip,
• the conversion layer additionally comprises a transparent particulate filler in the region of the side faces of the semiconductor chip, and
• the transparent particulate filler comprises transparent filler particles.