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US 11,107,954 B2Granted
Light-emitting diode chip, and method for manufacturing a light-emitting diode chip
AssigneeOSRAM OLED GmbH
InventorJens Ebbecke
Life of this patent
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Abstract
A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.
Claims18
A light-emitting diode chip comprising:
- an epitaxial semiconductor layer sequence comprising an active zone;
- wherein the epitaxial semiconductor layer sequence comprises a III/V compound semiconductor material comprising nitrides that are present on an interface of the epitaxial semiconductor layer sequence and the passivation layer;
- wherein the epitaxial semiconductor layer sequence generates electromagnetic radiation during operation;
- and
- a passivation layer comprising magnesium oxide and magnesium nitride;
- wherein the passivation layer is applied on a side surface of the semiconductor layer sequence and the passivation layer covers at least the active zone, the passivation layer comprising magnesium oxide and magnesium nitride having a common interface with the epitaxial semiconductor layer sequence.
3 more elements
A method for producing a light-emitting diode chip, comprising:
- providing an epitaxial semiconductor layer sequence having an active zone, which is suitable for generating electromagnetic radiation;
- applying a layer comprising magnesium nitride onto a side surface of the semiconductor layer sequence, the magnesium nitride being applied in direct contact onto the side surface of the semiconductor layer sequence;
- heat-treating a compound of the semiconductor layer sequence and the layer comprising magnesium nitride, to form a passivation layer comprising magnesium oxide and magnesium nitride.
A light-emitting diode chip comprising:
- an epitaxial semiconductor layer sequence comprising an active zone;
- wherein the epitaxial semiconductor layer sequence comprises a III/V compound semiconductor material comprising a phosphide compound semiconductor material that is present on an interface of the epitaxial semiconductor layer sequence and the passivation layer;
- wherein the epitaxial semiconductor layer sequence generates electromagnetic radiation during operation;
- and
- a passivation layer comprising magnesium oxide and magnesium nitride;
- wherein the passivation layer is applied on a side surface of the semiconductor layer sequence and the passivation layer covers at least the active zone, the passivation layer comprising magnesium oxide and magnesium nitride having a common interface with the epitaxial semiconductor layer sequence.
3 more elements
Dependencies are inferred from the claim text.