Light emitting chip and method of producing the same

A method for producing a light emitting chip, comprising:

• providing an epitaxial structure that includes an electrically conductive first-type semiconductor layer, a light emitting layer, and an electrically conductive second-type semiconductor layer, the light emitting layer being disposed on an upward surface of the first-type semiconductor layer, and having opposite upper and lower surfaces that are distal from and proximal to the upward surface of the first-type semiconductor layer, respectively, the second-type semiconductor layer being disposed on the upper surface of the light emitting layer, and having opposite top and bottom surfaces that are distal from and proximal to the upper surface of the light emitting layer, respectively;
• subjecting the second-type semiconductor layer and the light emitting layer to a mesa forming process, such that the second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the upward surface of the first-type semiconductor layer, the mesa structure having a lateral surface that extends from the lower surface of the light emitting layer to the top surface of the second-type semiconductor layer;
• forming a passivation layer over the lateral surface of the mesa structure;
• and
• forming a transparent current spreading layer on the top surface of the second-type semiconductor layer, the current spreading layer having a contact surface in contact with the top surface of the second-type semiconductor layer,
• wherein a distance between a periphery of the contact surface of the current spreading layer and a periphery of the top surface of the second-type semiconductor layer is not greater than 5 μm.