Method of transferring micro-LEDs from a gallium arsenide substrate

A micro-LED transfer method, comprising:

• in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate, and then fabricating metal electrodes;
• forming bumping electrodes corresponding to the micro-LEDs on a receiving substrate;
• bonding metal electrodes of the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate;
• and
• removing the GaAs original substrate,
• wherein, epitaxially growing micro-LEDs of two or all of the three colors on a GaAs original substrate comprises:
• epitaxially growing a layer of InGaAs on the GaAs original substrate, and then epitaxially growing the micro-LEDs of the two or all of the three colors on the layer of InGaAs,
• wherein, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate comprises:
• providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially growing blue micro-LEDs, and then epitaxially growing the blue micro-LEDs on areas not covered by the mask;
• or
• providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially grow green micro-LEDs, and then epitaxially growing the green micro-LEDs on areas not covered by the mask;
• or
• providing masks on corresponding areas of the single GaAs original substrate not required for epitaxially grow red micro-LEDs, and then epitaxially growing the red micro-LEDs on areas not covered by the mask.