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US 11,107,941 B2Granted
Vertical photodiode
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsCharles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
Life of this patent
Estimating the term…
Abstract
A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
Claims32
A vertical photodiode, comprising:
- a layer of semiconductor material having an upper surface;
- an active area within the layer of semiconductor material forming a diode, said active area having a germanium area with a lower portion that is intrinsic and an upper portion that is doped with a first conductivity type;
- a first doped region of the first conductivity type within the layer of semiconductor material and extending at the upper surface of the layer of semiconductor material, wherein said first doped region is in direct physical contact with a lateral wall of the upper portion of the germanium area;
- a second doped region of a second conductivity within the layer of semiconductor material, wherein the second doped region is in direct physical contact with the lower portion of the germanium area, the second doped region extending from the lower portion of the germanium area to the upper surface of the layer of semiconductor material;
- and
- first and second contact pads electrically coupled to the diode, wherein the first and second contact pads are located at positions which are laterally shifted away from the active area;
- and
- wherein said first contact pad is in direct physical contact with the first doped region at the upper surface of the layer of semiconductor material;
- and
- wherein said second contact pad is located in direct physical contact with the second doped region at the upper surface of the layer of semiconductor material.
7 more elements
A vertical photodiode, comprising:
- a layer of semiconductor material having an upper surface;
- an insulating trench extending from the upper surface into the layer of semiconductor material;
- an active area within the layer of semiconductor material at a first side of the insulating trench, the active area including a diode formed by:
- a germanium area including a lower portion that is intrinsic and an upper portion that is doped with a first conductivity type and a doped region of a second conductivity type;
- wherein the doped region of the second conductivity type extends under the insulating trench;
- a first doped contact region of the first conductivity type laterally contacting the upper portion of the germanium area, the first doped contact region extending over the upper surface of the layer of semiconductor material;
- a first contact pad located in contact with the first doped contact region;
- a second doped contact region of the second conductivity type in contact with the doped region of the second conductivity type, the second doped contact region extending at a second side of the trench opposite the first side;
- and
- a second contact pad located in contact with the second doped contact region at the upper surface of the layer of semiconductor material.
7 more elements
A vertical photodiode, comprising:
- an active area including a diode;
- wherein the active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type;
- first and second contact pads electrically coupled to the diode, wherein the first and second contact pads are located at positions which are laterally shifted away from the active area;
- an insulating trench separating the active area from the second contact pad;
- and
- an intrinsic silicon region between the active area and the insulating trench.
3 more elements
Dependencies are inferred from the claim text.