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US 11,107,938 B2Granted
Photodiode
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsBoris Rodrigues Goncalves, Arnaud Tournier
Life of this patent
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Abstract
A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.
Claims25
A photodiode, comprising:
- a semiconductor substrate which includes a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer;
- a plurality of semiconductor walls in the semiconductor substrate;
- wherein the plurality of semiconductor walls include:
- first and second outer semiconductor walls extending parallel to each other in a first direction, each of the first and second outer walls having a first length;
- and
- a plurality of inside semiconductor walls extending parallel to each other in the first direction and positioned between the first and second outer semiconductor walls, said plurality of inside semiconductor walls including:
- a first inside semiconductor wall having a second length less than the first length;
- and
- second and third inside semiconductor walls each having a third length less than the second length, wherein the second inside semiconductor wall is positioned between the first outer semiconductor wall and the first inside semiconductor wall and wherein the third inside semiconductor wall is positioned between the second outer semiconductor wall and the first inside semiconductor wall.
6 more elements
Dependencies are inferred from the claim text.