Structure and formation method of semiconductor device structure with nanowires
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWilman Tsai, Cheng-Hsien Wu, I-Sheng Chen, Stefan Rusu
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate including a first fin portion, a first nanostructure over the first fin portion. The first nanostructure has a dumbbell shape. The first nanostructure includes a semiconductor material layer over the first fin portion, and a cladding layer surrounding the semiconductor material layer. The semiconductor material layer has a rectangular shape, and the cladding layer has a hexagonal or quadrilateral shape. The semiconductor device structure includes a first gate structure surrounding the first nanostructure.
Claims20
A semiconductor device structure, comprising:
- a substrate comprising a first fin portion;
- a first nanostructure over the first fin portion, wherein the first nanostructure has a dumbbell shape, wherein the first nanostructure comprises:
- a semiconductor material layer over the first fin portion, wherein the semiconductor material layer has a rectangular shape;
- and
- a cladding layer surrounding the semiconductor material layer, wherein the cladding layer has a hexagonal or quadrilateral shape;
- and
- a first gate structure surrounding the first nanostructure;
- wherein the substrate further comprises a second fin portion adjacent to the first fin portion, wherein the semiconductor device structure further comprises:
- a second nanostructure over the second fin portion, wherein the second nanostructure is made of a different material than that of the first nanostructure, and the second nanostructure has a dumbbell shape.
A semiconductor device structure, comprising:
- a first nanostructure formed over a substrate, wherein the first nanostructure comprises a first edge portion and a central portion;
- wherein the first edge portion has a first height along a first direction, and the first direction is vertical to a top surface of the substrate;
- the central portion has a second height along the first direction, and the first height is greater than the second height;
- and
- a first gate structure surrounding the first nanostructure.
A semiconductor device structure, comprising:
- a substrate comprising a first fin portion and a second fin portion;
- a plurality of first nanostructures over the first fin portion, wherein two of the plurality of first nanostructures are spaced apart from each other, wherein one of the first nanostructures comprises:
- a first semiconductor material layer over the first fin portion, wherein the first semiconductor material layer has a rectangular shape;
- and
- a first cladding layer surrounding the semiconductor material layer, wherein the first cladding layer has a hexagonal or quadrilateral shape;
- and
- a plurality of second nanostructures over the second fin portion, wherein two of the plurality of second nanostructures contact each other.
Dependencies are inferred from the claim text.