US 11,107,929 B2Granted

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei Yamazaki, Tsutomu Murakawa, Hideomi Suzawa

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Abstract

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a third insulator over the second insulator, a fourth insulator and a first conductor over the third insulator, a fifth insulator over the fourth insulator and the first conductor, a first oxide over the fifth insulator, a second conductor and a third conductor over the first oxide, a second oxide over the first oxide and between the second conductor and the third conductor, a sixth insulator over the second oxide, and a fourth conductor over the sixth insulator. The hydrogen concentration of the second insulator is lower than that of the first insulator. The hydrogen concentration of the third insulator is lower than that of the second insulator.

Claims9

Dependent claims

A semiconductor device comprising:

a first insulator;
a second insulator over the first insulator;
a third insulator over the second insulator;
a fourth insulator and a first conductor over the third insulator;
a fifth insulator over the fourth insulator and the first conductor;
a first oxide over the fifth insulator;
a second conductor and a third conductor over the first oxide;
a second oxide over the first oxide and between the second conductor and the third conductor;
a sixth insulator over the second oxide;
a fourth conductor over the sixth, insulator;
a seventh insulator comprising a region in contact with a top surface of the fifth insulator, a side surface of the first oxide, a side surface of the second conductor, a top surface of the second conductor, a side surface of the third conductor, and a top surface of the third conductor;
an eighth insulator over the seventh insulator;
a ninth insulator over the eighth insulator;
a tenth insulator in contact with a top surface of the ninth insulator, a top surface of the second oxide, a top surface of the sixth insulator, and a top surface of the fourth conductor;
an eleventh insulator over the tenth insulator;
and
a twelfth insulator over the eleventh insulator,
wherein the eleventh insulator is in contact with a top surface of the second insulator, a side surface of the third insulator, a side surface of the fourth insulator, a side surface of the fifth insulator, a side surface of the seventh insulator, a side surface of the eighth insulator, a side surface of the ninth insulator, a side surface of the tenth insulator, and a top surface of the tenth insulator,
wherein a hydrogen concentration of the second insulator is lower than a hydrogen concentration of the first insulator, and
wherein a hydrogen concentration of the third insulator is lower than the hydrogen concentration of the second insulator.

17 more elements

A semiconductor device comprising:

a base insulating layer comprising:
a first insulating film;
a second insulating film over the first insulating film;
and
a third insulating film over the second insulating film;
a first gate electrode and a fourth insulating film over the base insulating layer;
a first gate insulating film over the first gate electrode and the fourth insulating film;
a first oxide semiconductor film over the first gate insulating film;
a source electrode and a drain electrode over the first oxide semiconductor film;
a second oxide semiconductor film over the first oxide semiconductor film and between the source electrode and the drain electrode;
a second gate insulating film over the second oxide semiconductor film;
a second gate electrode over the second gate insulating film;
a fifth insulating film in contact with a top surface of the first gate insulating film, a side surface of the first oxide semiconductor film, a side surface of the source electrode, a top surface of the source electrode, a side surface of the drain electrode, and a top surface of the drain electrode;
a sixth insulating film over the fifth insulating film;
a seventh insulating film over the sixth insulating film;
an eighth insulating film in contact with a top surface of the seventh insulating film, a top surface of the second oxide semiconductor film, a top surface of the second gate insulating film, and a top surface of the second gate electrode;
a ninth insulating film over the eighth insulating film;
and
a tenth insulating film over the ninth insulating film,
wherein the ninth insulating film is in contact with a top surface of the second insulating film, a side surface of the third insulating film, a side surface of the first gate insulating film, a side surface of the fourth insulating film, a side surface of the fifth insulating film, a side surface of the sixth insulating film, a side surface of the seventh insulating film, a side surface of the eighth insulating film, and a top surface of the eighth insulating film,
wherein the second insulating film has a lower hydrogen concentration than the first insulating film, and
wherein the third insulating film has a lower hydrogen concentration than the second insulating film.

19 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/690,891Filed 21 Nov 2019
Priority: JP JP2018-23969321 Dec 2018
Published: US 2020/0203533 A125 Jun 2020
Granted: 31 Aug 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
H10D 30/6729
Thin-film transistors [TFT]: characterised by the electrodes
H10D 30/6734
Multi-gate TFTs: having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs