Oxide semiconductor film and method for producing same
AssigneeFlosfia Inc.
InventorsTomochika Tanikawa, Toshimi Hitora
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Abstract
A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
Claims14
A semiconductor device comprising:
- a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
- an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table;
- and
- an electrode arranged on at least one of the p-type semiconductor layer or the n-type semiconductor layer,
- wherein the p-type semiconductor layer has a p-type carrier concentration of 1×1015/cm3 or more,
- wherein the p-type semiconductor layer has a hole mobility of 1 cm2/Vs or more, and
- wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
A semiconductor device comprising:
- a light-emitting layer having a first surface and a second surface;
- a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table positioned on the first surface of the light-emitting layer;
- and
- an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table positioned on the second surface of the light-emitting layer,
- wherein the p-type semiconductor layer has a p-type carrier concentration of 1×1015/cm3 or more,
- wherein the p-type semiconductor layer has a hole mobility of 1 cm2/Vs or more, and
- wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
A semiconductor device comprising:
- a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
- an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table;
- a first electrode formed on the p-type semiconductor layer;
- and
- a second electrode formed on the n-type semiconductor layer,
- wherein the p-type semiconductor layer has a p-type carrier concentration of 1×1015/cm3 or more,
- wherein the p-type semiconductor layer has a hole mobility of 1 cm2/Vs or more, and
- wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
A semiconductor device comprising:
- a p-type semiconductor layer having a metal oxide as a major component including a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
- an n-type semiconductor layer having a metal oxide as a major component including a metal of Group 13 of the periodic table;
- and
- an electrode arranged on at least one of the p-type semiconductor layer or the n-type semiconductor layer,
- wherein the p-type semiconductor layer has a hole mobility of 1 cm2/Vs or more, and
- wherein the p-type semiconductor layer and the n-type semiconductor layer are crystalline.
A method of manufacturing an oxide semiconductor device, the method comprising:
- generating atomized droplets for a p-type semiconductor layer by atomizing a raw material solution comprising a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table;
- generating atomized droplets for an n-type semiconductor layer by atomizing a raw material solution comprising a metal of Group 13 of the periodic table;
- carrying the atomized droplets onto a surface of a base by using a carrier gas;
- and
- causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the oxide semiconductor layer on the base.
Dependencies are inferred from the claim text.