Method of manufacturing semiconductor device including ferroelectric layer having columnar-shaped crystals
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWilman Tsai, Ling-Yen Yeh
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Abstract
In a method of manufacturing a negative capacitance structure, a ferroelectric dielectric layer is formed over a first conductive layer disposed over a substrate, and a second conductive layer is formed over the ferroelectric dielectric layer. The ferroelectric dielectric layer includes an amorphous layer and crystals.
Claims20
A method of manufacturing a negative capacitance structure, the method comprising:
- forming a first ferroelectric dielectric layer including columnar-shaped crystals over a first conductive layer disposed over a substrate;
- forming a second dielectric layer, which is an amorphous layer over the first ferroelectric dielectric layer;
- and
- forming a second conductive layer over the second dielectric layer, wherein:
- the amorphous layer and the columnar-shaped crystals are made of a same material including HfO2 and an oxide of a metal element, where the metal element is one or more selected from the group consisting of La, Y, Gd and Sr, and
- the columnar-shape crystals comprise an orthorhombic phase crystal.
A method of manufacturing a negative capacitance structure, the method comprising:
- forming an epitaxial layer over a semiconductor substrate;
- forming, by an epitaxial growth method, a first ferroelectric dielectric layer including columnar-shaped crystals directly on the epitaxial layer;
- forming a second dielectric layer, which is an amorphous layer over the first ferroelectric dielectric layer;
- and
- forming a first conductive layer over the second dielectric layer,
- wherein the columnar-shaped crystals extend along a film stack direction,
- wherein the columnar-shape crystals comprise an orthorhombic phase crystal of hafnium oxide.
A method of manufacturing a negative capacitance structure, the method compri sing:
- forming, by an epitaxial growth method, a first ferroelectric dielectric layer including columnar-shaped crystals over a semiconductor layer;
- forming a second dielectric layer, which is an amorphous layer, over the first ferroelectric dielectric layer;
- and
- forming a second conductive layer on and in direct contact with the second dielectric layer, which is an amorphous layer,
- wherein the columnar-shape crystals comprise an orthorhombic phase crystal of hafnium oxide.
The method of clam 10, wherein the first and second dielectric layers are made of HfO2 and ZrO2.
Dependencies are inferred from the claim text.