Semiconductor device

A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:

• a first conductivity type anode region provided in the semiconductor substrate in the diode region;
• a second conductivity type drift region that is provided at least in the diode region and is located below the anode region in the semiconductor substrate;
• a second conductivity type accumulation region that is provided at least in the diode region and is located between the anode region and the drift region in a depth direction of the semiconductor substrate;
• and
• an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate;
• wherein
• the plurality of contact portions include a first contact portion provided in the diode region;
• the first contact portion includes a first non-overlapping region in which the first contact portion and the accumulation region do not overlap in the depth direction at an end of the first contact portion in the first direction;
• the semiconductor device includes an active region having a plurality of the transistor regions and a plurality of the diode regions;
• each of the plurality of the transistor regions is an outer transistor region located at an end in a second direction perpendicular to the first direction;
• the plurality of contact portions include a plurality of second contact portions provided in the outer transistor region;
• each of the plurality of second contact portions includes a second non-overlapping region in which the second contact portion and the accumulation region do not overlap in the depth direction at an end of the second contact portion in the first direction;
• and
• in the outer transistor region located at the end in the second direction, the second non-overlapping region has a longer length in the first direction at a position closer to an outer peripheral end of the semiconductor substrate in the second direction.

A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:

• a first conductivity type anode region provided in the semiconductor substrate in the diode region;
• a second conductivity type drift region that is provided at least in the diode region and is located below the anode region in the semiconductor substrate;
• a second conductivity type accumulation region that is provided at least in the diode region and is located between the anode region and the drift region in a depth direction of the semiconductor substrate;
• and
• an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate;
• wherein
• the plurality of contact portions include a first contact portion provided in the diode region;
• the first contact portion includes a first non-overlapping region in which the first contact portion and the accumulation region do not overlap in the depth direction at an end of the first contact portion in the first direction;
• and
• the diode region includes:
• a plurality of dummy trench portions that extend in the first direction and are arrayed in a second direction perpendicular to the first direction;
• and
• a plurality of first mesa regions each being located between two dummy trench portions adjacent in the second direction among the plurality of dummy trench portions and being a part of the semiconductor substrate;
• and
• at least one first mesa region included in the plurality of first mesa regions does not include a first conductivity type contact region that includes a higher first conductivity type dopant concentration than the anode region and is connected to the first contact portion at a position where an end of the first contact portion in the first direction and the at least one first mesa region overlap.

A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:

• a first conductivity type anode region provided in the semiconductor substrate in the diode region;
• a second conductivity type drift region that is provided at least in the diode region and is located below the anode region in the semiconductor substrate;
• a second conductivity type accumulation region that is provided at least in the diode region and is located between the anode region and the drift region in a depth direction of the semiconductor substrate;
• and
• an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate;
• wherein
• the plurality of contact portions include a first contact portion provided in the diode region;
• the first contact portion includes a first non-overlapping region in which the first contact portion and the accumulation region do not overlap in the depth direction at an end of the first contact portion in the first direction;
• the transistor region includes a second conductivity type collector region provided at a lower-surface side of the semiconductor substrate;
• the diode region includes a first conductivity type cathode region provided at the lower-surface side of the semiconductor substrate;
• and
• a lower surface side boundary that is a boundary between the collector region and the cathode region is located closer to a side of the diode region than an upper surface side boundary that is a boundary between the transistor region and the diode region at an upper-surface side of the semiconductor substrate in a second direction perpendicular to the first direction.