Semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsYasunari Umemoto, Isao Obu, Kaoru Ideno, Shigeki Koya
Life of this patent
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Abstract
A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.
Claims8
A semiconductor device comprising:
- a collector layer, a base layer, and an emitter layer that are disposed on a substrate to form a bipolar transistor;
- and
- an emitter electrode that is in ohmic contact with the emitter layer,
- wherein
- the emitter layer has a shape that is long in one direction in plan view,
- a difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface, and
- the ohmic contact interface has a shape that is long in the same direction the emitter layer is long.
A semiconductor device comprising:
- a collector layer, a base layer, and an emitter layer that are disposed on a substrate to form a bipolar transistor;
- an emitter electrode that is in ohmic contact with the emitter layer;
- and
- an emitter wiring line connected to the emitter electrode through a contact hole formed in an insulating film,
- wherein
- the emitter layer has a shape that is long in one direction, and
- in at least one end portion of the emitter layer, an emitter access resistance which is an electrical resistance from a junction interface between the emitter layer and the base layer to the emitter electrode is 5 times or more the emitter access resistance in a central portion of the emitter layer.
Dependencies are inferred from the claim text.