Plate design to decrease noise in semiconductor devices

A semiconductor device comprising:

• an isolation structure disposed in a semiconductor substrate, wherein the isolation structure demarcates a device region in the semiconductor substrate;
• a first source/drain region disposed in the device region and having a first doping type;
• a second source/drain region disposed in the device region and having the first doping type, wherein the first source/drain region is spaced from the second source/drain region, and wherein a first portion of the device region extends laterally from the first source/drain region to the second source/drain region;
• a gate region disposed in the device region, wherein the gate region adjoins a side of the first portion of the device region laterally between the first source/drain region and the second source/drain region;
• and
• a plate disposed over the semiconductor substrate, wherein:
• the plate comprises a first doped region, a second doped region, and a third doped region;
• the first doped region and the third doped region have the first doping type;
• the second doped region has a second doping type opposite the first doping type;
• the second doped region is disposed between the first doped region and the third doped region;
• and
• the second doped region overlies a first section of the first portion of the device region.

A semiconductor device comprising:

• an isolation structure disposed in a semiconductor substrate, wherein the isolation structure demarcates a device region in the semiconductor substrate;
• a first source/drain region disposed in the device region, wherein the isolation structure has a first sidewall disposed on a first side of the first source/drain region;
• a second source/drain region disposed in the device region and laterally spaced from the first source/drain region, wherein the first source/drain region is disposed laterally between the first sidewall of the isolation structure and the second source/drain region, and wherein a first portion of the device region extends laterally from the first source/drain region to the second source/drain region;
• a gate region disposed in the device region, wherein the gate region adjoins a side of the first portion of the device region laterally between the first source/drain region and the second source/drain region;
• and
• a plate disposed over the semiconductor substrate, wherein:
• the plate comprises a first doped region, a second doped region, and a third doped region;
• the first doped region and the third doped region have a first doping type;
• the second doped region has a second doping type opposite the first doping type;
• the second doped region is disposed between the first doped region and the third doped region;
• and
• the second doped region overlies a first section of the first portion of the device region.