Methods of forming semiconductor devices and FinFET devices having shielding layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Hao Chang, Cheng-Hao Hou, Kuei-Lun Lin, Kun-Yu Lee, Xiong-Fei Yu, Chi-On Chui
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Abstract
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate structure over the substrate. The gate structure includes a high-k layer over the substrate, a shielding layer over the high-k layer, and an N-type work function metal layer over the shielding layer. In some embodiments, the shielding layer has a dielectric constant less than a dielectric constant of the high-k layer.
Claims19
A method of forming a semiconductor device, comprising:
- providing a substrate with a dummy gate and a dielectric layer aside the dummy gate;
- removing the dummy gate to form a trench in the dielectric layer;
- forming a high-k layer on a surface of the trench, wherein the high-k layer is formed in a crystalline state;
- introducing an aluminum precursor and an oxygen-containing precursor or an aluminum precursor and a nitrogen-containing precursor into a process chamber to form a shielding layer on the high-k layer, wherein the shielding layer is formed in an amorphous state;
- and
- forming an N-type work function metal layer on the shielding layer.
A method of forming a FinFET device, comprising:
- providing a substrate with at least one fin, a dummy gate across the at least one fin, and a dielectric layer aside the dummy gate;
- removing the dummy gate to form a trench in the dielectric layer;
- forming a high-k layer on a surface of the trench;
- introducing an aluminum precursor and an oxygen-containing precursor into a process chamber to form a shielding layer on the high-k layer;
- and
- forming an N-type work function metal layer on the shielding layer.
A method of forming a FinFET device, comprising:
- providing a substrate with at least one fin, a dummy gate across the at least one fin, and a dielectric layer aside the dummy gate;
- removing the dummy gate to form a trench in the dielectric layer;
- forming a high-k layer on a surface of the trench;
- introducing an aluminum precursor and an oxygen-containing precursor or an aluminum precursor and a nitrogen-containing precursor into a process chamber to forming a shielding layer on the high-k layer, wherein a dielectric constant of the shielding layer is lower than a dielectric constant of the high-k layer;
- and
- forming an N-type work function metal layer on the shielding layer.
Dependencies are inferred from the claim text.