Group III-V compound semiconductor device
AssigneeKorea Institute of Science and Technology
InventorsHyunsu Ju, Jin-Dong Song, Joonyeon Chang, Gyosub Lee
Life of this patent
Estimating the term…
Abstract
Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.
Claims18
A Group III-V compound semiconductor device comprising:
- a substrate;
- a compound semiconductor layer provided on the substrate;
- and
- a buffer layer interposed between the compound semiconductor layer and the substrate,
- wherein the compound semiconductor layer comprises:
- a first semiconductor area having a first conductivity type;
- and
- a second semiconductor area having a second conductivity type,
- wherein the buffer layer comprises a high electron density area,
- wherein within the buffer layer, an electron density of the high electron density area is higher than an electron density beside the high electron density area,
- wherein the first semiconductor area and the second semiconductor area are arranged in a direction parallel to an upper surface of the substrate,
- wherein the first semiconductor area and the second semiconductor area are in physical contact with each other in the direction parallel to the upper surface of the substrate,
- wherein the first semiconductor area comprises a first Group V element,
- wherein the second semiconductor area comprises the first Group V element and a second Group V element.
A Group III-V compound semiconductor device comprising:
- a substrate;
- a compound semiconductor layer provided on the substrate;
- and
- a buffer layer interposed between the compound semiconductor layer and the substrate,
- wherein the compound semiconductor layer comprises:
- a first semiconductor area having a first conductivity type;
- and
- a second semiconductor area having a second conductivity type,
- wherein the buffer layer comprises a high electron density area,
- wherein within the buffer layer, an electron density of the high electron density area is higher than an electron density beside the high electron density area,
- wherein the first semiconductor area and the second semiconductor area are arranged in a direction parallel to an upper surface of the substrate,
- wherein the first semiconductor area and the second semiconductor area are in physical contact with each other in the direction parallel to the upper surface of the substrate,
- wherein the first semiconductor area and the second semiconductor area each comprise a first Group V element and a second Group V element,
- wherein a ratio of the first Group V element and the second Group V element in the first semiconductor area is different from a ratio of the first Group V element and the second Group V element in the second semiconductor area.
Dependencies are inferred from the claim text.