Method for forming a semiconductor device and a semiconductor device

A method for forming a semiconductor device, the method comprising:

• providing a wafer-stack comprising a monocrystalline first silicon carbide layer comprising a first defect density of basal plane dislocations, a second silicon carbide layer comprising a second defect density of basal plane dislocations which is at least two times the first defect density, and an intermediate layer which is not based on silicon carbide, sandwiched between the first silicon carbide layer and the second silicon carbide layer and comprising recombination centers for holes;
• splitting the wafer-stack along a split plane in the first silicon carbide layer to form a device wafer comprising the intermediate layer and a silicon carbide split layer covering the intermediate layer;
• epitaxial depositing silicon carbide to form an epitaxial silicon carbide layer at the silicon carbide split layer;
• and
• forming a rectifying junction in and/or at the epitaxial silicon carbide layer.

A semiconductor device, comprising:

• a monocrystalline first silicon carbide layer comprising a first density of basal plane dislocations;
• a conductive intermediate layer arranged at the monocrystalline first silicon carbide layer and comprising graphene, a ternary nitride, a ternary carbide, and/or a carbon layer;
• a second silicon carbide layer arranged at the conductive intermediate layer and comprising a second density of basal plane dislocations which is at least two times the first density of basal plane dislocations;
• a first metallization arranged on the first silicon carbide layer;
• and
• a second metallization arranged on the second silicon carbide layer,
• wherein the conductive intermediate layer is a graphene layer.

A semiconductor device, comprising:

• a monocrystalline first silicon carbide layer comprising a first density of basal plane dislocations;
• a conductive intermediate layer arranged at the monocrystalline first silicon carbide layer and comprising graphene, a ternary nitride, a ternary carbide, and/or a carbon layer;
• a second silicon carbide layer arranged at the conductive intermediate layer and comprising a second density of basal plane dislocations which is at least two times the first density of basal plane dislocations;
• a first metallization arranged on the first silicon carbide layer;
• and
• a second metallization arranged on the second silicon carbide layer,
• wherein the second density is at least about 1.5*103/cm2, and/or wherein the first density is at most about 5*102/cm2.