SiC epitaxial wafer and method for producing same

A SiC epitaxial wafer comprising:

• a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane;
• and
• an epitaxial layer provided on the SiC single crystal substrate,
• wherein in the epitaxial layer, a basal plane dislocation density of a basal plane dislocation which continues from the SiC single crystal substrate to an outer surface is 0.1 dislocations/cm2 or less, and a defect density caused by Si droplets is 0.1 defects/cm2 or less, and
• wherein a total basal plane dislocation density of the basal plane dislocation which continues from the SiC single crystal substrate to the outer surface and a basal plane dislocation which is converted into a threading edge dislocation in the epitaxial layer is 0.1 dislocations/cm2 or less.