Fin field effect transistor (FinFET) device having position-dependent heat generation

A semiconductor device comprising:

• a substrate having a major surface;
• a dielectric material on the major surface of the substrate;
• a first plurality of fins extending from the major surface of the substrate, wherein each fin of the first plurality of fins has a first dopant concentration of a first dopant, the first dopant comprises a first species, and a portion of each of the first plurality of fins below a topmost surface of the dielectric material is substantially free of the first dopant;
• and
• a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, each fin of the second plurality of fins has a second dopant concentration of a second dopant, the second dopant comprises a second species different from the first species, and the first dopant concentration is different from the second dopant concentration.

A semiconductor device comprising:

• a substrate having a major surface;
• a dielectric material on the major surface of the substrate;
• a first plurality of fins extending from the major surface of the substrate, wherein a maximum thickness of the dielectric material directly contacting each fin of the first plurality of fins is a first thickness;
• and
• a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, a maximum thickness of the dielectric material directly contacting each fin of the second plurality of fins has a second thickness, and the second thickness is different from the first thickness.