Method for manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes doping a substrate with a dopant to form a first well region of a first circuit and a second well region of a second circuit; forming a semiconductor fin extending over the first and second well regions, wherein a first section of the semiconductor fin on the first well region has a width different from a second section of the semiconductor fin on the second well region; forming a first gate electrode across first section of the first semiconductor fin and a second gate electrode across the second section of the semiconductor fin; and forming a first source/drain region adjoining the first section of the semiconductor fin and a second source/drain region adjoining the second section of the semiconductor fin.
Claims20
A method for manufacturing a semiconductor device, comprising:
- doping a substrate with a dopant to form a first well region of a first circuit and a second well region of a second circuit;
- forming a semiconductor fin extending over the first and second well regions, wherein a first section of the semiconductor fin on the first well region has a width different from a second section of the semiconductor fin on the second well region;
- forming a first gate electrode across the first section of the semiconductor fin and a second gate electrode across the second section of the semiconductor fin;
- and
- forming a first source/drain region adjoining the first section of the semiconductor fin and a second source/drain region adjoining the second section of the semiconductor fin.
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor fin of a first circuit and a second semiconductor fin of a second circuit over a substrate, wherein the first semiconductor fin has a wider width than the second semiconductor fin;
- forming a first gate electrode across the first semiconductor fin, a second gate electrode across the second semiconductor fin, and a third gate electrode, wherein the first semiconductor fin and the second semiconductor fin meet at a position directly below the third gate electrode;
- forming a first source/drain structure adjoining the first semiconductor fin and a second source/drain structure adjoining the second semiconductor fin, wherein when viewed in a cross section, a maximal width of the first source/drain structure is greater than a maximal width of the second source/drain structure;
- and
- forming a first contact over the first source/drain structure and a second contact over the second source/drain structure.
A method for manufacturing a semiconductor device, comprising:
- forming a first semiconductor fin and a second semiconductor fin extending upwardly from a substrate, wherein the second semiconductor fin extends from a longitudinal end of the first semiconductor fin along a lengthwise direction of the first semiconductor fin;
- forming an isolation structure laterally surrounding the first and second semiconductor fins;
- forming a first gate structure across the first and second semiconductor fins, wherein a first portion of the first semiconductor fin below the first gate structure has a width greater than a portion of the second semiconductor fin below the first gate structure;
- forming a first source/drain region on the first semiconductor fin;
- and
- forming a second source/drain region on the second semiconductor fin.
Dependencies are inferred from the claim text.