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US 11,107,887 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHidenori Fujii
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: an n-type semiconductor substrate having a cell region and a termination region provided around the cell region; a p-type anode layer provided on an upper surface of the n-type semiconductor substrate in the cell region; an n-type buffer layer provided on a lower surface of the n-type semiconductor substrate; and a p-type layer provided on the lower surface of the n-type buffer layer in the termination region and deeper than the n-type buffer layer.
Claims10
A semiconductor device comprising:
- an n-type semiconductor substrate having a cell region and a termination region provided around the cell region, the cell region including an anode of a diode or a metal-oxide semiconductor (MOS) structure of an insulated-gate bipolar transistor (IGBT), and the termination region does not include either the anode of the diode or the MOS structure of the IGBT;
- a p-type anode layer provided on an upper surface of the n-type semiconductor substrate in the cell region;
- an n-type buffer layer provided on a lower surface of the n-type semiconductor substrate;
- and
- a p-type layer provided on the lower surface of the n-type semiconductor substrate in the termination region and deeper than the n-type buffer layer as measured from a bottom of the semiconductor device.
2 more elements
A semiconductor device comprising:
- an n-type semiconductor substrate having a cell region and a termination region provided around the cell region, the cell region including an anode of a diode or a metal-oxide semiconductor (MOS) structure of an insulated-gate bipolar transistor (IGBT), and the termination region does not include either the anode of the diode or the MOS structure of the IGBT;
- a p-type anode layer provided on an upper surface of the n-type semiconductor substrate in the cell region;
- an n-type buffer layer provided on a lower surface of the n-type semiconductor substrate;
- and
- a p-type collector layer provided on the lower surface of the n-type semiconductor substrate and shallower than the n-type buffer layer as measured from a bottom of the semiconductor device, wherein
- the termination region includes a region in which the n-type buffer layer is not provided, and the p-type collector layer is provided in the region, such that the p-type collector layer directly contacts a bottom surface of the semiconductor substrate in the region.
3 more elements
A semiconductor device comprising:
- an n-type semiconductor substrate having a cell region and a termination region provided around the cell region;
- a p-type anode layer provided on an upper surface of the n-type semiconductor substrate in the cell region;
- an n-type buffer layer provided on a lower surface of the n-type semiconductor substrate;
- and
- a p-type collector layer provided on the lower surface of the n-type semiconductor substrate and shallower than the n-type buffer layer, wherein
- the termination region includes a region in which the n-type buffer layer is not provided, and the p-type collector layer is provided in the region, and
- in the n-type buffer layer, toward a center region of the p-type collector layer of the cell region, an impurity concentration decreases and a depth is locally reduced.
4 more elements
Dependencies are inferred from the claim text.