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US 11,107,884 B2Granted
Sealed cavity structures with a planar surface
AssigneeGlobalFoundries U.S. Inc.
InventorsSiva P. Adusumilli, Anthony K. Stamper, Laura J. Silverstein, Cameron E. Luce
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to sealed cavity structures having a planar surface and methods of manufacture. The structure includes a cavity formed in a substrate material and which has a curvature at its upper end. The cavity is covered with epitaxial material that has an upper planar surface.
Claims19
A method comprising:
- forming a trench in a substrate material;
- filling a top portion of the trench with a first material;
- and
- covering the trench with a second material at a certain temperature such that the first material reflows within the trench forming a sealed cavity within the substrate material which has a shape different than the trench prior to the covering of the trench.
1 more element
A method comprising:
- forming a trench in a substrate material;
- filling a top portion of the trench with a first material;
- and
- covering the trench with a second material at a certain temperature such that the first material reflows within the trench forming a cavity within the substrate material which has a shape different than the trench prior to the covering of the trench,
- wherein the first material is epitaxial SiGe material that is reflowed and the second material is a sealing layer formed after the reflowing and above the epitaxial SiGe material.
2 more elements
A method comprising:
- forming a trench in a substrate material;
- forming a cavity structure in the substrate, extending from the trench;
- filling a top portion of the trench with a first semiconductor material to seal the cavity structure;
- and
- covering the first material with a second semiconductor material,
- wherein the first semiconductor material comprises SiGe and the second semiconductor material comprises Si, and the first semiconductor material is deposited at a first temperature and the second semiconductor material is deposited at a second temperature, higher than the first temperature.
3 more elements
Dependencies are inferred from the claim text.