Integrated circuit device including complementary metal-oxide-semiconductor transistor with field cut regions to increase carrier mobility

An integrated circuit device comprising:

• a substrate comprising an n-type region and a p-type region;
• a first active region in the n-type region;
• a second active region in the p-type region, the second active region being spaced apart from the first active region in a first direction with an isolation region between the second active region and the first active region;
• an isolation film in the isolation region;
• a first field cut region in the n-type region in the isolation region and extending along a second direction perpendicular to the first direction;
• a second field cut region spaced apart from the first field cut region with the first active region between the second field cut region and the first field cut region;
• and
• a third field cut region spaced apart from the first field cut region with the second active region between the third field cut region and the first field cut region,
• wherein, in a plan view, the second field cut region comprises a first protrusion protruding toward the first field cut region, and
• wherein, in the plan view, the third field cut region comprises a second protrusion protruding toward the first field cut region.

An integrated circuit device comprising:

• a substrate comprising an n-type region and a p-type region;
• a plurality of first active regions in the n-type region;
• a plurality of second active regions in the p-type region, the plurality of second active regions being spaced apart from the plurality of first active regions in a first direction with an isolation region between the plurality of second active regions and the plurality of first active regions;
• an isolation film in the isolation region;
• a first field cut region in the isolation region, the first field cut region comprising a portion of the substrate and extending across the isolation film in a second direction perpendicular to the first direction;
• a second field cut region spaced apart from the first field cut region with the plurality of first active regions between the second field cut region and the first field cut region;
• and
• a third field cut region spaced apart from the first field cut region with the plurality of second active regions between the third field cut region and the first field cut region,
• wherein, in a plan view, the second field cut region comprises a first protrusion protruding toward the first field cut region, and
• wherein, in the plan view, the third field cut region comprises a second protrusion protruding toward the first field cut region.