Capacitor structure for integrated circuit, and related methods
AssigneeGlobalFoundries U.S. Inc.
InventorsDewei Xu, Sunil K. Singh, Siva R. Dangeti, Seung-Yeop Kook
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Abstract
Embodiments of the disclosure provide a capacitor structure for an integrated circuit (IC), and methods to form the capacitor structure. The capacitor structure may include: a first ring electrode in an inter-level dielectric (ILD) layer on a substrate; an inner electrode positioned within the first ring electrode; and a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer.
Claims20
A capacitor structure for an integrated circuit (IC), the capacitor structure including:
- a first ring electrode in an inter-level dielectric (ILD) layer on a substrate, and a top surface of the first ring electrode substantially coplanar with a top surface of the ILD layer;
- an inner electrode positioned within the first ring electrode;
- and
- a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer.
An integrated circuit (IC) structure comprising:
- a capacitor structure, the capacitor structure including:
- a first ring electrode in an inter-level dielectric (ILD) layer on a substrate;
- an inner electrode positioned within, and concentric with, the first ring electrode;
- a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer, and a top surface of the capacitor dielectric substantially coplanar with a top surface of the ILD layer;
- a second ring electrode in the ILD layer, the second ring electrode surrounding and concentric with the first ring electrode, and wherein the capacitor dielectric further separates the first ring electrode from the second ring electrode, and separates a bottom surface of the second ring electrode from the ILD layer;
- and
- a barrier film on the top surface of the ILD layer and the top surface of the capacitor dielectric.
A capacitor structure for an integrated circuit (IC), the capacitor structure including:
- a first ring electrode in an inter-level dielectric (ILD) layer on a substrate, and a top surface of the first ring electrode substantially coplanar with a top surface of the ILD layer, the ILD layer including an oxide;
- an inner electrode positioned within the first ring electrode;
- and
- a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer, wherein the capacitor dielectric has a scyphoid geometry, and includes a nitride dielectric material.
Dependencies are inferred from the claim text.