Capacitor structure and fabrication method thereof
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsKai-Lou Huang, Fu-Che Lee, Feng-Yi Chang, Chieh-Te Chen, Meng-Chia Tsai
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Abstract
A capacitor structure includes a substrate having thereon a storage node contact, a cylinder-shaped bottom electrode disposed on the storage node contact, a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode, a capacitor dielectric layer conformally covering the cylinder-shaped bottom electrode and the supporting structure, and a top electrode covering the capacitor dielectric layer. The supporting structure has a top surface that is higher than that of the cylinder-shaped bottom electrode. The top surface of the supporting structure has a V-shaped sectional profile.
Claims18
A capacitor structure, comprising:
- a substrate having thereon a storage node contact;
- a cylinder-shaped bottom electrode disposed on the storage node contact;
- a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode, wherein the supporting structure has a top surface that is higher than an uppermost point of the cylinder-shaped bottom electrode, and wherein the top surface of the supporting structure has a V-shaped sectional profile;
- a capacitor dielectric layer conformally covering the cylinder-shaped bottom electrode and the supporting structure;
- and
- a top electrode covering the capacitor dielectric layer.
A method for forming a capacitor structure, comprising:
- providing a substrate having thereon a storage node contact;
- forming a cylinder-shaped bottom electrode on the storage node contact;
- forming a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode;
- forming a capacitor dielectric layer over the cylinder-shaped bottom electrode and the supporting structure, wherein the supporting structure has a top surface that is higher than an uppermost point of the cylinder-shaped bottom electrode, and wherein the top surface of the supporting structure has a V-shaped indentation;
- and
- forming a top electrode over the capacitor dielectric layer.
Dependencies are inferred from the claim text.