Photoelectric conversion apparatus

A photoelectric conversion apparatus comprising:

• a semiconductor substrate including a plurality of photoelectric conversion portions;
• first and second filters on which a transmittance of infrared light is higher than a transmittance of visible light;
• and
• third and fourth filters on which the transmittance of the visible light is higher than the transmittance of the infrared light,
• wherein a photoelectric conversion portion disposed so as to overlap the first filter in a planar view, a photoelectric conversion portion disposed so as to overlap the second filter in the planar view, a photoelectric conversion portion disposed so as to overlap the third filter in the planar view, and a photoelectric conversion portion disposed so as to overlap the fourth filter in the planar view are arranged adjacently to one another in one direction,
• wherein the photoelectric conversion portion disposed so as to overlap the first filter in the planar view includes a first semiconductor region having a first conductivity type in which a signal charge is accumulated,
• wherein the photoelectric conversion portion disposed so as to overlap the second filter in the planar view includes a second semiconductor region having the first conductivity type,
• wherein the photoelectric conversion portion disposed so as to overlap the third filter in the planar view includes a third semiconductor region having the first conductivity type,
• wherein the photoelectric conversion portion disposed so as to overlap the fourth filter in the planar view includes a fourth semiconductor region having the first conductivity type,
• wherein a fifth semiconductor region having a second conductivity type, which is an opposite conductivity type of the first conductivity type, is disposed between the second semiconductor region and the third semiconductor region,
• wherein a sixth semiconductor region having the second conductivity type is disposed between the first semiconductor region and the second semiconductor region,
• wherein a seventh semiconductor region having the second conductivity type is disposed between the third semiconductor region and the fourth semiconductor region,
• wherein each of the fifth semiconductor region, the sixth semiconductor region, and the seventh semiconductor region includes at least one peak of an impurity concentration,
• wherein a position of a peak separated farthest away from a surface of the semiconductor substrate on a first filter side, among peaks that the sixth semiconductor region has, is separated farther away from the surface of the semiconductor substrate on the first filter side than a position of a peak separated farthest away from the surface of the semiconductor substrate on the first filter side, among peaks that the seventh semiconductor region has, and
• wherein a position of a peak separated farthest away from the surface of the semiconductor substrate on the first filter side, among peaks that the fifth semiconductor region has, is separated farther away from the surface of the semiconductor substrate on the first filter side than the position of the peak separated farthest away from the surface of the semiconductor substrate on the first filter side, among the peaks that the sixth semiconductor region has.

A photoelectric conversion apparatus comprising:

• a first filter on which a transmittance of infrared light is higher than a transmittance of visible light;
• a second filter on which the transmittance of the visible light is higher than the transmittance of the infrared light;
• a first charge accumulation portion formed below the second filter, the first charge accumulation portion being a semiconductor region having a first conductivity type;
• a second charge accumulation portion formed below the first filter, the second charge accumulation portion being a semiconductor region having the first conductivity type;
• an isolation region formed below the first charge accumulation portion, the isolation region being formed of a semiconductor region having a second conductivity type, which is a different conductivity type from the first conductivity type;
• and
• a non-isolation region formed below the second charge accumulation portion, the non-isolation region being formed of a semiconductor region having a lower potential for a charge than that of the isolation region,
• wherein the isolation region and the non-isolation region are provided at the same height,
• wherein the non-isolation region is surrounded by the isolation region in a planar view, and
• wherein a size of an opening of the isolation region surrounding the non-isolation region is larger than a size of a pixel including the second charge accumulation portion in the planar view.