BEOL cross-bar array ferroelectric synapse units for domain wall movement
AssigneeInternational Business Machines Corporation
InventorsJin Ping Han, Ramachandran Muralidhar, Paul M. Solomon, Dennis M. Newns, Martin M. Frank
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Abstract
A method is presented for incorporating a metal-ferroelectric-metal (MFM) structure in a cross-bar array in back end of the line (BEOL) processing. The method includes forming a first electrode, forming a ferroelectric layer in direct contact with the first electrode, forming a second electrode in direct contact with the ferroelectric layer, such that the first electrode and the ferroelectric layer are perpendicular to the second electrode to form the cross-bar array, and biasing the second electrode to adjust domain wall movement within the ferroelectric layer.
Claims20
A method comprising:
- forming a first electrode;
- forming a ferroelectric layer in direct contact with the first electrode;
- forming a second electrode in direct contact with the ferroelectric layer, the first electrode, the ferroelectric layer, and the second electrode defining a cross-bar array;
- and
- biasing the second electrode to adjust domain wall movement within the ferroelectric layer.
A metal-ferroelectric-metal (MFM) structure, the structure comprising:
- a first electrode;
- a first ferroelectric layer in direct contact with the first electrode;
- a second electrode in direct contact with the first ferroelectric layer, the first electrode, the first ferroelectric layer, and the second electrode defining a cross-bar array;
- and
- biasing members for providing current to the second electrode to adjust domain wall movement within the first ferroelectric layer.
A metal-ferroelectric-metal (MFM) structure, the structure comprising:
- a first electrode;
- a first ferroelectric layer in direct contact with the first electrode;
- a second ferroelectric layer disposed over the first ferroelectric layer;
- a second electrode in direct contact with the first and second ferroelectric layers, the first electrode, the first and second ferroelectric layers, and the second electrode defining a cross-bar array;
- and
- biasing members for providing current to the second electrode to adjust domain wall movement within the first ferroelectric layer.
Dependencies are inferred from the claim text.