Staircase and contact structures for three-dimensional memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorLi Hong Xiao
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Abstract
Embodiments of staircase and contact structures of a three-dimensional (3D) memory device and fabrication method thereof are disclosed. The 3D memory device includes a semiconductor substrate and a plurality of through-substrate-trenches penetrating the semiconductor substrate. The 3D memory device also includes a film stack disposed on a first surface of the semiconductor substrate extending through the through-substrate-trenches to a second surface of the semiconductor substrate, wherein the film stack includes alternating conductive and dielectric layers. The 3D memory device also includes a staircase structure formed at an edge of the film stack.
Claims20
A memory device, comprising:
- a film stack of alternating conductive and dielectric layers disposed on both a first surface and a second surface of a substrate, wherein the first and second surfaces are on opposite sides of the substrate;
- a plurality of memory strings formed in the film stack on the first surface of the substrate;
- and
- a staircase structure formed in the film stack on the second surface of the substrate.
A method for forming a three-dimensional memory device, comprising:
- forming a through-substrate-trench penetrating through a substrate;
- disposing a film stack of alternating conductive and dielectric layers on both a first surface and a second surface of the substrate, wherein the first and second surfaces are on opposite sides of the substrate;
- forming a staircase structure in the film stack on the second surface of the substrate;
- and
- forming a plurality of memory strings in the film stack on the first surface of the substrate.
Dependencies are inferred from the claim text.