Apparatuses including memory cells and related methods

A method of forming an apparatus, comprising:

• forming a stack of alternating conductive materials and dielectric materials overlying a base material;
• forming an opening through the stack;
• forming an outer oxide material within the opening;
• forming a nitride material within the opening and laterally adjacent to the outer oxide material;
• forming an inner oxide material within the opening and laterally adjacent to the nitride material;
• forming a semiconductor material within the opening and adjacent to each of the outer oxide material, the nitride material, and the inner oxide material, portions of each of the semiconductor material, the outer oxide material, the nitride material, and the inner oxide material being vertically recessed within the base material;
• and
• forming a channel material adjacent to the semiconductor material within the opening, a band gap of the channel material different than a band gap of each of the semiconductor material and the base material.

An apparatus, comprising:

• a channel material extending vertically through a stack of alternating dielectric structures and conductive structures;
• a liner material laterally adjacent to the channel material, the liner material extending vertically through the stack;
• a semiconductor material underlying the channel material, a band gap of the semiconductor material being relatively smaller than a band gap of the channel material, wherein lower surfaces of the liner material and the semiconductor material are substantially coplanar with one another;
• and
• a dielectric material centrally located within the channel material, the dielectric material extending vertically through the stack.

An apparatus, comprising:

• a channel material extending vertically through a stack of alternating dielectric structures and conductive structures;
• a liner material laterally adjacent to the channel material, the liner material extending vertically through the stack, the liner material comprising an outer oxide material adjacent to the stack of alternating dielectric structures and conductive structures, an inner oxide material adjacent to the channel material, and a nitride material between the outer oxide material and the inner oxide material;
• a semiconductor material underlying the channel material, a band gap of the semiconductor material being relatively smaller than a band gap of the channel material, wherein lower surfaces of the liner material and the semiconductor material are substantially coplanar with one another;
• and
• a central dielectric material laterally adjacent to the channel material, the central dielectric material extending vertically through the stack.