Flash memory structure with enhanced floating gate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Shu Huang, Ming Chyi Liu
Life of this patent
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Abstract
The present disclosure relates to a flash memory structure. The flash memory structure includes a first doped region and a second doped region disposed within a substrate. A select gate is disposed over the substrate between the first doped region and the second doped region. A floating gate is disposed over the substrate between the select gate and the first doped region, and a control gate is over the floating gate. The floating gate extends along multiple surfaces of the substrate.
Claims20
A flash memory structure, comprising:
- a first doped region and a second doped region disposed within a semiconductor substrate;
- a select gate disposed over the semiconductor substrate between the first doped region and the second doped region;
- a floating gate disposed over the semiconductor substrate between the select gate and the first doped region;
- a control gate over the floating gate;
- and
- wherein the floating gate extends along one or more sidewalls and an upper surface of the semiconductor substrate.
A flash memory structure, comprising:
- a source region and a drain region disposed within a substrate;
- a floating gate disposed over the substrate between the source region and the drain region;
- a control gate disposed over the floating gate;
- and
- wherein the floating gate has inner sidewalls that are separated from outermost edges of the floating gate and that define one or more protrusions vertically extending outward from a lower surface of the floating gate that faces the substrate.
A flash memory structure, comprising:
- a first doped region and a second doped region disposed within a substrate;
- a select gate disposed over the substrate between the first doped region and the second doped region;
- and
- a floating gate disposed over the substrate between the select gate and the first doped region, wherein the floating gate comprises an interior sidewall arranged vertically between a first lower surface and a second lower surface, the first lower surface and the second lower surface facing the substrate, and wherein the second lower surface is vertically between the first lower surface and an upper surface of the floating gate facing away from the substrate.
Dependencies are inferred from the claim text.