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US 11,107,824 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device, and a method of manufacturing a semiconductor device, includes first stack structures enclosing first channel structures and spaced apart from each other. The first channel structures are spaced apart from each other at a first distance in each of the first stack structures and the first stack structures are spaced apart from each other at a second distance.
Claims17
A semiconductor device, comprising:
- first stack structures spaced apart from each other;
- first channel structures passing through the first stack structures;
- a second stack structure disposed above or under the first stack structures;
- second channel structures passing through the second stack structure and coupled to the first channel structures in a one-to-one manner, wherein each of the second channel structures includes a core insulating layer passing through the second stack structure and a semiconductor material extending between the core insulating layer and each of the first channel structures;
- and
- a gap-fill insulating layer disposed between the first stack structures, wherein the gap-fill insulating layer does not extend between the second channel structures,
- wherein the first channel structures include a first row channel and a second row channel neighboring each other with the gap-fill insulating layer interposed between the first row channel and the second row channel,
- wherein the first channel structures are spaced apart from each other by a first distance within a corresponding first stack structure of the first stack structures, and
- wherein the first row channel and the second row channel are spaced apart from each other by a second distance greater than the first distance.
6 more elements
A semiconductor device, comprising:
- first stack structures spaced apart from each other by a first separation region;
- first channel structures passing through the first stack structures;
- a second stack structure disposed above or under the first stack structures and including a connection region overlapping the first separation region;
- and
- second channel structures passing through the second stack structure and coupled to the first channel structures in a one-to-one manner,
- wherein the first channel structures include a first row channel and a second row channel neighboring each other with the first separation region interposed between the first row channel and the second row channel,
- wherein the first channel structures are spaced apart from each other by a first distance within a corresponding first stack structure of the first stack structures, and
- wherein the first row channel and the second row channel are spaced apart from each other by a second distance greater than the first distance.
5 more elements
A semiconductor device, comprising:
- cell stack structures each including a connection region and side regions extending from both sides of the connection region, and the cell stack structures separated from each other by a slit;
- select stack structures disposed above or under the cell stack structures and separated from each other by a first separation region overlapping the connection region or a second separation region overlapping the slit;
- first channel structures passing through the select stack structures;
- and
- second channel structures passing through the cell stack structures and coupled to the first channel structures in a one-to-one manner,
- wherein the first channel structures are disposed closer to the second separation region than the second channel structures.
3 more elements
Dependencies are inferred from the claim text.